International

Cover Images

At SNU

Papers in preparation

126. Y. Lee et al. in preparation

125. H. W. Jeong et al. in preparation

124. H. Choi et al. in preparation

123. J. Y. Park et al. in preparation

122. G. H. Park et al. in preparation

121. G. H. Park et al. in preparation

120. K. Yang et al. in preparation

119. D. H. Lee et al. in preparation

Papers under review

2024

118. Sangwoo Lee, Jun-Gyu Choi, Se Hyun Kim, Won-June Lee, Taejin Kim, Min Hyuk Park, Myung-han Yoon, Materials Science & Engineering R, "Non-Centrosymmetric Crystallization in Ferroelectric Hafnium Zirconium Oxide via Photon-Assisted Defect Modulation" , accepted

117. Seokjung Yun, Hoon Kim, Myungsoo Seo, Min-Ho Kang, Taeho Kim, Seongwoo Cho, Min Hyuk Park, Sanghun Jeon, Yang-Kyu Choi, Seungbum Hong, ACS Applied Electronic Materials, "Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia", accepted.

116. Sung Hyuk Park, Hyeon Ji Lee, Min Hyuk Park,* Jihyun Kim,* Ho Won Jang,* Journal of Physics D: Applied Physics, "Ferroelectric Tunnel Junctions: Promise, Achievements and Challenges", accepted.

115. Jaewook Lee+, Se Hyun Kim+, Hyojun Choi, Hyun Woo Jeong, Kun Yang, Ju Yong Park, Yong Hyeon Cho, Sang-Youn Par, Younghwan Lee*, and Min Hyuk Park* "Ferroelectricity of Hf0.5Zr0.5O2 thin film induced at 350 °C by thermally accelerated nucleation during atomic layer deposition", IEEE Transactions on Electron Devices, 2024

114. Jung Woo Cho+, Myeong Seop Song+, In Hyeok Choi, Kyoung-June Go, Jaewoo Han, Tae Yoon Lee, Chihwan An, Hyung-Jin Choi, Changhee Sohn, Min Hyuk Park, Seung-Hyub Baek, Jong Seok Lee*, Si-Young Choi* and Seung Chul Chae*, "Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films" Advanced Functional Materials, (accepted)

113. Hyojun Choi+, Yong Hyeon Cho+, Se Hyun Kim, Kun Yang, Min Hyuk Park* "Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry", Journal of Physical Chemistry Letters, 15, 983-997 , 2024.01.22.

112. Se Hyun Kim+, Younghwan Lee+, Dong Hyun Lee+, Geun Hyeong Park, Hyun Woo Jeong, Kun Yang, Yong Hyeon Cho, Young Yong Kim, Min Hyuk Park*, "Depolarization mitigated in ferroelectric Hf0.5Zr0.5O 2 ultrathin films (<5 nm) on Si substrate by interface engineering ", Journal of Advanced Ceramics, 2024.03.13

111. Sojin Kim+, Jaewook Lee+, Jong Hyeok Seo, Jinseok Hong, Ji-Hwan Kwon, Min Hyuk Park*, and Seung-Yong Lee*, "Exploring the Role of TiN Electrodes in the Formation of Ferroelectric HfxZr1-xO2 Thin Films through Transmission Electron Microscopy", Journal of the Korean ceramic society, 2024.01.23

110. Younghwan Lee+, Se Hyun Kim+, Hyun Woo Jeong, Geun Hyeong Park, Jaewook Lee, Young Yong Kim, and Min Hyuk Park*, "Mitigation of field-driven dynamic phase evolution in ferroelectric Hf 0.5 Zr 0.5 O2 films by adopting oxygen-supplying electrode", Applied Surface Science, 648, 158948, 2024.03.01

2023

109. Jaewook Lee+, Kun Yang+, Ju Young Kwon+, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon*, Min Hyuk Park*, "Role of Oxygen Vacancies in Ferroelectric or Resistive Switching Hafnium Oxide", Nano Convergence 10(1): 1-39, 2023. (invited)

108. José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder *, "Roadmap on ferroelectric hafnia- and zirconia-based materials and devices", APL Materials, 11: 089201, 2023.

107. Dong Hyun Lee, Geun Hyeong Park, Se Hyun Kim, Kun Yang, Jaewook Lee, Hyojun Choi, Younghwan Lee, Jin Ju Ryu, Je In Lee, Gun Hwan Kim, and Min Hyuk Park*, "Effect of Electrode Material on the Polarization Switching Kinetics of Hf 0.5 Zr 0.5 O2 film", IEEE Electron Device Letters, 44(9): 1440-1443, 2023.09.

106. Song-Hyeon Kuk, Seung-Min Han, Bong Ho Kim, Joon Pyo Kim, Seong-Kwang Kim, Seung-Yeop Ah, Min Hyuk Park, Jae-Hoon Han, Sang-Hyeon Kim*, "Examination of Ferroelectric FET for "Cold" Nonvolatile Memory", IEEE Transactions on Electron Devices, 1-6, 2023.06.12.

105. Dong Hyun Lee+, Younghwan Lee+, Yong Hyeon Cho, Hyojun Choi, Se Hyun Kim and Min Hyuk Park*, "Unveiled Ferroelectricity in Well-Known Non-Ferroelectric Materials and Their Semiconductor Applications", Advanced Functional Materials, 2303956, 2023.06. (+co-first authors)

104. Younghwan Lee+, Hyun Woo Jeong+, Se Hyun Kim, Kun Yang, Min Hyuk Park*, "Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices", Materials Science in Semiconductor Processing, 160: 107411, 2023.06.15.(+co-first authors)

103. Kun Yang+, Gi-Yeop Kim+, Jin Joo Ryu, Dong Hyun Lee, Ju Yong Park, Se Hyun Kim, Geun Hyeong Park, Geun Taek Yu, Gun Hwan Kim*, Si Young Choi*, Min Hyuk Park*, "Wake-up-mitigated giant ferroelectricity in Hf 0.5 Zr 0.5 O2 thin films through oxygen-providing, surface-oxidized W electrode", Materials Science in Semiconductor Processing, 164: 107565 , 2023.05.31. (+co-first authors)

102. Beom Yong Kim+, In Soo Lee+, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, Seung Ryong Byun, Kyung Do Kim, Jae Hoon Lee, Deok-Yong Cho, Min Hyuk Park, Cheol Seong Hwang*, "Top Electrode Engineering for High-Performance Ferroelectric Hf 0.5 Zr 0.5 O2 Capacitors", Advanced Materials Technologies, 2300146, 2023.04.06.

101. Ju Yong Park+, Duk-Hyun Choe+, Dong Hyun Lee+, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung-Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo*, and Min Hyuk Park*, "Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics", Advanced Materials, 2204904, 2023.03.11. (+co-first authors)

100. Ju Yong Park+, Dong Hyun Lee+, Geun Hyeong Park, Jaewook Lee, Younghwan Lee*, and Min Hyuk Park*, "A perspective on the physical scaling down of hafnia-based ferroelectrics", Nanotechnology, 34(20): 202001, 2023.02.28. (+co-first authors)

99. Geun Hyeong Park+, Dong Hyun Lee+, Hyojun Choi, Taegyu Kwon, Yong Hyeon Cho, Se Hyun Kim, and Min Hyuk Park*, "Emerging fluorite-structured antiferroelectrics and their semiconductor applications", ACS Applied Electronic Materials, 5(2): 642-663, 2023.02.07. (Selected as a supplementary cover) (+co-first authors)

98. T. Mikolajick, Min Hyuk Park, Laura Begon-Lours, and Stefan Slesazeck, "From Ferroelectric Material Optimization to Neuromorphic Devices", Advanced Materials, 2206042, 2023.02.03.

97. Kun Yang+, Se Hyun Kim+, Hyun Woo Jeong, Dong Hyun Lee, Geun Hyeong Park, Younghwan Lee**, Min Hyuk Park*, "Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry", Chemistry of Materials, 35(6): 2219–2237, 2023.01.31. (Selected as a Front Cover)(+co-first authors)

96. Song-Hyeon Kuk, Seungmin Han, Dong Hyun Lee, Bong Ho Kim, Joonsup Shim, Min Hyuk Park, Jae-Hoon Han, and Sang-Hyeon Kim*, "Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization", IEEE Electron Device Letters, 44(1): 36-39, 2023.01

2022

95. Younghwan Lee, Rachel A. Broughton , H. Alex Hsain, Seung Keun SongPatrick G. Edgington, Madison D. Horgan, Amy Dowden, Amanda Bednar, Dong Hyun Lee, Gregory N. Parsons, Min Hyuk Park, and Jacob L. Jones, "The Influence of Crystallographic Texture on Structural and Electrical Properties in Ferroelectric Hf 0.5 Zr 0.5 O2 " Journal of Applied Physics, 132: 244103, 2022.12.28.

94. Seung Kyu Ryoo, Kyung Do Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Yoon Ho Jang, Min Hyuk Park, Cheol Seong Hwang, "Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al 0.7Sc 0.3N Film with Thickness down to 20 nm", Advanced Electronic Materials, 8(11): 2200726, 2022.11

93. Dong Hyun Lee+, Geun Hyeong Park+, Se Hyun Kim, Ju Yong Park, Kun Yang, Stefan Slesazeck, Thomas Mikolajick*, Min Hyuk Park*, "Neuromorphic Devices Based on Fluorite-Structured Ferroelectrics", InFomat, 4(12): e12380, 2022.10.13. (Selected as the Front Cover) (+co-first authors)

92. Sergey V. Barabash*, Min Hyuk Park*, and Tony Schenk*, "(Hf,Zr)O2-based Ferroelectrics: From Fundamentals to Applications", Phys. Status Solidi RRL, 16(10): 2200324, 2022.10.07.

91. Yong Bin Lee, Beom Yong Kim, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Min Hyuk Park, Cheol Seong Hwang*, "Oxygen-Scavenging Effects of Added Ti Layer in the TiN Gate of Metal-Ferroelectric-Insulator-Semiconductor Capacitor with Al-doped HfO2 Ferroelectric Film", Advanced Electronic Materials, 8(11): 2200310, 2022.06.23.

90. Beom Yong Kim, Hyeon Woo Park, Seung Dam Hyun, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Deok-Yong Cho, Min Hyuk Park*, and Cheol Seong Hwang*, "Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films using a HfO0.61N0.72 Interfacial Layer", Advanced Electronic Materials, 2100042, 2022.06.12.

89. Kun Yang, EunBeen Lee, Dong Hyun Lee, Ju Yong Park, Se Hyun Kim, Geun Hyeong Park, Geun Taek Yu, Je In Lee, Gun Hwan Kim, Min Hyuk Park*, "Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates", Composites Part B, 236: 109824, 2022.05.01.

88. Ju Yong Park, Dong Hyun Lee, Kun Yang, Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Eun Been Lee, Kwang Ho Kim*, and Min Hyuk Park*, "Engineering Strategies in Emerging Fluorite-Structured Ferroelectrics" ACS Applied Electronic Materials, 4(4): 1369-1380, 2022.04.04. (Invited article for early career forum)

87. Uwe Schroeder+, Min Hyuk Park+, Thomas Mikolajick, Cheol Seong Hwang, "The fundamentals and applications of ferroelectric HfO2", Nature Reviews Materials, 7: 653-669, 2022.03.30. (+co-first authors)

86. Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yun-Zhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Hangbing Lyu, and Cheol Seong Hwang, "Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film", Nature Communications, 13: 645, 2022.02.03.

85. Ah-Jin Cho, Hong Keun Chung, In-Hwan Baek, Kun Yang, Min Hyuk Park, Seung-Hyub Baek, and Seong Keun Kim*, "Effects of Oxygen Sources on Properties of Atomic-Layer-Deposited Ferroelectric Hafnium Zirconium Oxide Thin Films", Ceramics International, 48(3): 3280-3286, 2022.02.01.

84. Joonbong Lee, Myeong Seop Song, Woo-Sung Jang, Jinho Byun, Hojin Lee, Min Hyuk Park, Jaekwang Lee, Young-Min Kim*, Seung Chul Chae*, and Taekjib Choi*, "Modulating the ferroelectricity of hafnium zirconium oxide ultrathin films via interface engineering to control the oxygen vacancy distribution", Advanced Materials Interfaces, 9(7): 2101647, 2022.01.28.

83. Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun Hyeong Park, Jin Ju Ryu, Je In Lee*, Gun Hwan Kim*, and Min Hyuk Park*, "Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films" Acta Materialia, 222: 117405, 2022.01.01.

2021

82. Min Hyuk Park*, Daewoong Kwon*, Uwe Schroeder, and Thomas Mikolajick*, "Binary Ferroelectric Oxides for Future Computing Paradigms", MRS Bulletin, 46: 1071-1079, 2021.12.08.

81. Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Dong Hyun Lee, Ju Yong Park, Kun Yang, Eun Been Lee, Je In Lee* and Min Hyuk Park*, "Interfacial Engineering of Mo/Hf0.3Zr0.7O2/Si Capacitor Using Direct Scavenging Effect of Thin Ti layer", Chemical Communications, 57(93): 12452-12455, 2021.12.04. (Invited paper to emerging investigator collection, selected as the Front Cover)

80. Kun Yang, Ju Yong Park, Dong Hyun Lee, Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Eun Been Lee, Je In Lee*, and Min Hyuk Park*, "A brief review on the ferroelectric fluorite-structured nanolaminate" Korean Journal of Metals and Materials, 59(12): 849-856, 2021.11.19.

79. P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy*, Min Hyuk Park, Chel-Jong Choi*, "Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes", Applied Physics A, 127: 803, 2021.10.01.

78. Beom Yong Kim, Se Hyun Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Min Hyuk Park*, and Cheol Seong Hwang*, "Improved Ferroelectricity in Hf0.5Zr0.5O2 by Inserting an Upper HfOxNy Interfacial Layer", Applied Physics Letters, 119: 122902, 2021.09.21.

At PNU

2021

77. Huimin Qiao, Chenxi Wang, Woo Seok Choi*, Min Hyuk Park*, Yunseok Kim*, "Ultra-thin Ferroelectrics", Materials Science and Engineering R, 145: 100622 (2021). (Invited review).

76. Sergey V. Barabash*, Simon Fichtner*, Min Hyuk Park*, Tony Schenk*, "Emerging Fluorite- and Wurtzite-type Ferroelectrics: From (Hf,Zr)O2 to AlN and Related Materials", Physica Status Solidi RRL, 15(5): 2100201 (2021).

75. Thomas Mikolajick, Uwe Schroeder, Min Hyuk Park, "Special Topic on Ferroelectricity in Hafnium Oxide: Materials and Devices", Applied Physics Letters, 118: 180402 (2021). (Guest Editorial).

74. Monica Materano, Patrick D. Lomenzo, Alfred Kersch, Min Hyuk Park, Thomas Mikolajick, and Uwe Schroeder*, "Interplay between oxygen defects and dopants: Effect on structure and performance of HfO2-based ferroelectrics", Inorganic Chemistry Frontiers, 8(10): 2650-2672 (2021). (Invited review).

73. Dong Hyun Lee, Younghwan Lee, Kun Yang, Ju-Yong Park, Se-Hyun Kim, Pothala Reddi Sekhar Reddy, Monica Materano, Halid Mulaosmanovic, Thomas Mikolajick, Jacob L. Jones*, Uwe Schroeder*, and Min Hyuk Park*, "Domains and Domain Dynamics in Fluorite-structured Ferroelectrics" Applied Physics Reviews, 8: 021312 (2021). (Invited review) (Related News) (PNU Research).

72. T. Mikolajick, S. Slesazeck, H. Mulaosmanovic , M.H. Park, S. Fichtner, P. D. Lomenzo, M. Hoffmann, and U. Schroeder, "Next Generation ferroelectric materials for semiconductor process integration and their applications" Journal of Applied Physics, 129(10): 100901 , 2021. (Invited perspective, selected as a featured article).[PDF]

71. Yu-Rim Jeon, Jungmin Choi, Jung-Dae Kwon, Min Hyuk Park, Yonghun Kim, and Changhwan Choi*, "Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in Atomic Switch Embedded with 2D NbSe2 Material", ACS Applied Materials & Interfaces, 13(8): 10161-10170, 2021. [PDF]

70. Jung-Min Choi, Hye Yeon Jang, Ah Ra Kim, Jung-Dae Kwon, Byungjin Cho*, Min Hyuk Park*, and Yonghun Kim*, "Ultra-Flexible and Rollable 2D-MoS2/Si Heterojunction-based Near-Infrared Photodetector via Direct Synthesis", Nanoscale, 13: 672-680, 2021. [PDF] (Selected as the Front Cover)

2020

69. Ju Yong Park+, Kun Yang+, Dong Hyun Lee+, Se Hyun Kim+, Younghwan Lee, P. R. Sekhar Reddy, Jacob L. Jones*, and Min Hyuk Park*, "A Perspective on Semiconductor Devices Based on Fluorite-Structured Ferroelectrics from the Materials-Device Integration Perspective", J. Appl. Phys., 128(24): 240904, 2020. (Invited perspective) (+co-first authors, *corresponding authors)

68. Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park, Young Hwan Lee, Yong Bin Lee, Beom Yong Kim, Ho Hyun Kim, Beak Su Kim, and Cheol Seong Hwang*, "Field-induced ferroelectric Hf1-xZrxO2 thin films for high-k Dynamic Random Access Memory", Adv. Electron. Mater., 6: 2000631, 2020. [PDF]

67. Beom Yong Kim, Baek Su Kim, Seung Dam Hyun, Ho Hyun Kim, Yong Bin Lee, Hyun Woo Park, Min Hyuk Park*, Cheol Seong Hwang*, "Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes", Appl. Phys. Lett., 117(2): 022902, 2020. [PDF]

66. Min Hyuk Park, Dong Hyun Lee, Kun Yang, Ju-Yong Park, Geun Taek Yu, Hyeon Woo Park, Monica Materano, Terence Mittmann, Patrick Dominic Lomenzo, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang, "Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices", Journal of Materials Chemistry C, 8: 10526-10550, 2020. (Invited review, selected as the Inside Front Cover) [PDF]

65. Baek Su Kim, Seung Dam Hyun, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeon Woo Park, Yong Bin Lee, Jangho Roh, Beom Yong Kim, Ho Hyun Kim, Min Hyuk Park*, Cheol Seong Hwang*, "A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf 0.5 Zr 0.5 O2 Thin Films Using Tetrakis (ethylmethylamino) and Tetrakis (dimethylamino) Precursors", Nanoscale Research Letters, 15(1): 1-11, 2020 [PDF]

2019

64. Tony Schenk, Chris M. Fancher, Min Hyuk Park, Claudia Richter, Christopher Künneth, Alfred Kersch, Jacob L. Jones, Thomas Mikolajick, Uwe Schroeder,"On the Origin of the Large Remanent Polarization in La:HfO2", Advanced Electronic Materials, 5(12): 1900303, 2019.12.05. [PDF] [SI]

63. Min Hyuk Park, Han Joon Kim, Gwang Yeop Lee, Jae Hong Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyun Woo Park, Hye Jung Chang, Jung Hae Choi, and Cheol Seong Hwang, "A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices", Applied Physics Review, 6(4): 041403, 2019.11.08. (Featured Article) (Highlighted in Scilight) [PDF]

62. Min Hyuk Park, Cheol Seong Hwang, "Fluorite-structure antiferroelectrics", Reports on Progress in Physics, 82(12): 124502, 2019.11.07. [PDF]

61. Min Hyuk Park, Young Hwan Lee, Cheol Seong Hwang, "Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory", Nanoscale, 11(41): 19477-19487, 2019.11.07. (Invited article) [PDF]

60. Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang, "Broad phase transition of fluorite‐structured ferroelectrics for large electrocaloric effect", Physica Status Solidi RRL, 13(9): 1900177, 2019.09.13. [PDF]

59. T. Mittmann, M. Materano, P. D. Lomenzo, Min Hyuk Park, I. Stolichnov, M. Cavalieri, C. Zhou, J. L. Jones, T. Szyjka, M. Müller, A. Kersch, T. Mikolajick and U. Schroeder, "Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering", Advanced Materials Inferfaces, 6(11): 1900042, 2019.06.07.

58. Keum Do Kim, Yu Jin Kim, Min Hyuk Park, Hyeon Woo Park, Young Jae Kwon, Yong Bin Lee, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Baek Su Kim, and Cheol Seong Hwang," Transient Negative Capacitance Effect in the Atomic-Layer Deposited Al2O3/Hf 0.3Zr 0.7O2 Bilayer Thin Film", Adv. Funct. Mater., 29(17): 1808228, 2019.04.25.[PDF] [SI]

57. Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang*, "Thermodynamic and kinetic origins of ferroelectricity in fluorite structure oxides", Adv. Electron. Mater., 5(3): 1800522, 2019.03. (Progress Report) [PDF]

56. Young Hwan Lee, Seung Dam Hyun, Hae Jin Kim, Jun Shik Kim, Chanyoung Yoo, Taehwan Moon, Keum Do Kim, Hyunwoo Park, Yong Bin Lee, Baek Soo Kim, Jangho Roh, Min Hyuk Park* and Cheol Seong Hwang*, "Nucleation-limited Ferroelectric Orthorhombic Phase Formation in Hf 0.5 Zr 0.5 O2 Thin Films", Adv. Electron. Mater., 5(2): 1800436, 2019.02. (*co-corresponding author) [PDF]

55. Maxim G. Kozodaev, Anna G. Chernikova, Evgeny V. Korostylev, Min Hyuk Park, Roman R. Khakimov, Cheol S. Hwang and Andrey M. Markeev*, "Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping", J. Appl. Phys., 125(3): 034101, 2019.01. [PDF]

2018

54. T. Schenk, M. Hoffmann, M. Pešić, M. H. Park, C. Richter, U. Schroeder and T. Mikolajick, "Physical approach to ferroelectric impedance spectroscopy: The Rayleigh element", Phys. Rev. Appl., 10: 064004, 2018. [PDF]

53. Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang, "Morphotropic Phase Boundary of Hf1-xZrxO2 Thin Films for Dynamic Random Access Memories", ACS Appl. Mater. Interfaces, 10(49): 42666-42673, 2018.11.23. [PDF]

52. Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Beak Su Kim, Cheol Seong Hwang*, "Dispersion in ferroelectric switching performance of polycrystalline Hf 0.5 Zr 0.5 O2 thin films", ACS Appl. Mater. Interfaces, 10(41): 35374-35384, 2018.09.24. [PDF]

51. Maxim G. Kozodaev, Anna G. Chernikova, Roman R. Khakimov, Min Hyuk Park, Cheol Seong Hwang, Andrey M. Markeev*, "La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors", Appl. Phys. Lett., 113: 123902, 2018.09.18. [PDF]

50. Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang*, "Review and perspective on ferroelectric HfO2-based thin films for memory applications", MRS Commun., 8(3): 795-808, 2018.08.28. (Invited perspective article) [PDF]

Before PNU

2018

49. Everett D. Grimley, Sam Frisone, Tony Schenk, Min Hyuk Park, Chris M. Fancher, Thomas Mikolajick, Jacob L. Jones, Uwe Schroeder and James M. LeBeau, "Insights into Texture and Phase Coexistence in Polycrystalline and Polyphasic Ferroelectric HfO2 Thin Films using 4D-STEM", Micros. Microanal., 24(S1): 184-185, 2018.08.01. [PDF]

48. Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park, Uwe Schroeder, "Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors", MRS Bull., 43(5): 340-346, 2018.05.10. [PDF]

47. Sven Jachalke, Tony Schenk, Min Hyuk Park, Uwe Schroeder, Thomas Mikolajick, Hartmut Stöcker, Erik Mehner, Dirk C Meyer, "Pyroelectricity of silicon-doped hafnium oxide thin films", Appl. Phys. Lett., 112(14): 142901, 2018.04.02. [PDF]

46. Min Hyuk Park, Ching‐Chang Chung, Tony Schenk, Claudia Richter, Karl Opsomer, Christophe Detavernier, Christoph Adelmann, Jacob L Jones, Thomas Mikolajick, Uwe Schroeder, "Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction", Adv. Electron. Mater., 4(7): 1800091, 2018.05.16. [PDF] [SI]

45. Min Hyuk Park, Ching‐Chang Chung, Tony Schenk, Claudia Richter, Michael Hoffmann, Steffen Wirth, Jacob L Jones, Thomas Mikolajick, Uwe Schroeder, "Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO 2", Adv. Electron. Mater., 4(4): 1700489, 2018.04. [PDF] [SI]

44. U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, FPG Fengler, D Pohl, B Rellinghaus, C Zhou, CC Chung, JL Jones, T Mikolajick, "Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material", Inorg. Chem., 57(5): 2752-2765, 2018.02.15. [PDF]

43. Anna G. Chernikova, Maxim G. Kozodaev, Dmitry V. Negrov, Evgeny V. Korostylev, Min Hyuk Park, Uwe Schroeder, Cheol Seong Hwang and A. M. Markeev*, "Improved ferroelectric switching endurance of La-doped Hf0.5Zr0.5O2 thin films", ACS Appl. Mater. Interfaces, 10(3): 2701-2708, 2018.01.24. [PDF]

42. Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Thomas Mikolajick, Uwe Schroeder, and Cheol Seong Hwang*, "Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films", Nanoscale, 10(2): 716-725, 2018.01.14. [PDF]

41. Jun Jiang, Zi Long Bai, Zhi Hui Chen, Long He, David Wei Zhang, Qing Hua Zhang, Jin An Shi, Min Hyuk Park, James F. Scott, Cheol Seong Hwang, An Quan Jiang*, "Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories", Nat. Mater., 17(1): 49-56, 2018.01. [PDF]

2017

40. Yu Jin Kim, Hyeon Woo Park, Seung Dam Hyun, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Taehwan Moon, Min Hyuk Park, Cheol Seong Hwang*, "Voltage drop in a ferroelectric single layer capacitor by retarded domain nucleation", Nano Lett., 17(12): 7796-7802, 2017.12. [PDF]

39. C. Richter, T. Schenk, M. H. Park, F. A. Tscharnkte, E. D. Grimley, J. M. LeBeau, C. Zhou, J. L. Jones, T. Mikolajick, U. Schroeder*, "Si Doped HfO2 - A Fragile Ferroelectric System", Adv. Electron. Mater., 3(10): 1700131, 2017.10. [PDF]

38. Maxim Kozodaev, Anna Chernikova, Evgeny Korostylev, Min Hyuk Park, Uwe Scrhroeder, Cheol Seong Hwang, Andrey Markeev*, "Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition", Appl. Phys. Lett., 111(13): 132903, 2017.09.25. [PDF]

37. Keum Do Kim, Young Hwan Lee, Taehong Gwon, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park* and Cheol Seong Hwang*, "Scale-up and Optimization of HfO2-ZrO2 Solid Solution Thin Films for the Electrostatic Supercapacitors", Nano Energy, 39: 390-399, 2017.09. (*co-corresponding author) [PDF]

36. Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Tony Schenk, Keum Do Kim, Thomas Mikolajick, Uwe Schroeder*, and Cheol Seong Hwang*, "Surface and grain boundary energy as the key enabler to ferroelectricity in nanoscale hafnia-zirconia: comparison of model and experiment", Nanoscale, 9: 9973-9986, 2017.07.18. (*co-corresponding author) [PDF]

35. Young Hwan Lee, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyun Woo Park, Yong Bin Lee, Min Hyuk Park*, and Cheol Seong Hwang*, "Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering", Nanotechnology, 28(30): 305703, 2017.07.28. (*co-corresponding author) [PDF]

34. Terence Mittmann*, Franz P. G. Fengler, Claudia Richter, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder, "Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance", Microelectronic Engineering, 178(S1): 48-51, 2017.06.25. [PDF]

33. Min Hyuk Park*, Tony Schenk, Michael Hoffmann, Steve Knebel, Jan Gärtner, Thomas Mikolajick, Uwe Schroeder, "Effect of Acceptor Doping on Phase Transitions of HfO2 Thin Films for Energy-Related Applications", Nano Energy, 36: 381-389, 2017.06. [PDF]

32. Min Hyuk Park*, Tony Schenk, Chris M. Fancher, Everett D. Grimley, Chuanzhen Zhou, Claudia Richter, James M. LeBeau, Jacob L. Jones, Thomas Mikolajick, Uwe Schroeder, "A Comprehensive Study on the Structural Evolution of HfO2 Thin Films Doped with Various Dopants", J. Mater. Chem. C, 5(19): 4677-4690, 2017.05.21. [PDF]

31. Franz P. G. Fengler, Milan Pešić, Sergej Starschich, Theodor Schneller, Christopher Künneth, Ulrich Böttger, Halid Mulaosmanovic, Tony Schenk, Min Hyuk Park, Robin Nigon, Paul Muralt, Thomas Mikolajick, Uwe Schroeder*, "Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics", Adv. Electron. Mater., 3(4): 1600505, 2017.04. [PDF]

30. Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, Cheol Seong Hwang*, "Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution", APL Mater., 5(4): 042301, 2017.04. [PDF]

2016

29. Min Hyuk Park, Han Joon Kim, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang*, "Two-step polarization switching mediated by nonpolar intermediate phase in Hf0.4Zr0.6O2 thin film", Nanoscale, 8(29): 13898-13907, 2016.10.07. [PDF]

28. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang*, "Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films", Adv. Mater., 28(36): 7956-7961, 2016.09.28. [PDF]

27. Keum Do Kim, Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Taehong Gwon, Cheol Seong Hwang*, "Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition", J. Mater. Chem. C, 4(28): 6864-6872, 2016.07.28. [PDF]

26. Yu Jin Kim, Hiroyuki Yamada, Taehwan Moon, Young Jae Kwon, Cheol Hyun An, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Min Hyuk Park, and Cheol Seong Hwang*, "Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers", Nano Lett., 16(7): 4375, 2016.07. [PDF]

25. Min Hyuk Park, Han Joon Kim, Yu Jin Kim. Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Franz Fengler, Uwe Schroeder, Cheol Seong Hwang*, "Effect of Zr Content on the Wake-Up Effect in Hf1−xZrxO2 Films", ACS Appl. Mater. Interfaces, 8(24): 15466-15475, 2016.06.22. [PDF]

24. Seul Ji Song, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Taehwan Moon, Keum Do Kim, Jung-Hae Choi, Zhihui Chen, Anquan Jiang, Cheol Seong Hwang*, "Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors", Sci. Rep., 6: 20825, 2016.02.11. [PDF]

23. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang*, "A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O2 films by pulse-switching measurement", Nanoscale, 8(3): 1383-1389, 2016.01.21. [PDF]

22. Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Woojin Jeon, Taehwan Moon, Keum Do Kim, Doo Seok Jeong, Hiroyuki Yamada, and Cheol Seong Hwang*, "Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure", Sci. Rep., 6: 19039, 2016.01.08. [PDF]

2015

21. Yu Jin Kim, Min Hyuk Park, Woojin Jeon, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang*, "Interfacial charge induced polarization switching in Al 2 O 3 /Pb(Zr,Ti)O3 bilayer", J. Appl. Phys., 118(22): 224105, 2015.12.14. [PDF]

20. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang*, "Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling", Appl. Phys. Lett., 107(19): 192907, 2015.11.09. [PDF]

19. An Quan Jiang, Xiang Jian Meng, David Wei Zhang, Min Hyuk Park, Sijung Yoo, Yu Jin Kim, James F. Scott*, Cheol Seong Hwang*, "Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong", Sci. Rep., 5: 14618, 2015.10.06. [PDF]

18. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang*, "Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films", J. Mater. Chem. C, 3(24): 6291-6300, 2015.06.28. [PDF]

17. Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Johannes Müller, Alfred Kersch, Uwe Schroeder, Thomas Mikolajick, Cheol Seong Hwang*, "Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-based Films", Adv. Mater., 27(11): 1811-1831, 2015.03.18. [PDF]

16. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*, "Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1-xO2 films", Nano Energy, 12: 131, 2015.03.31. [PDF]

2014

15. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*, "Thin HfxZr1-xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability", Adv. Energy Mater., 4(16): 1400610, 2014.11.18. [PDF] [SI]

14. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Woojin Jeon, Taehong Gwon, Taehwan Moon, Keum Do Kim, and Cheol Seong Hwang*, "Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer", Appl. Phys. Lett., 105(19): 192903, 2014.11.10. [PDF] [SI]

13. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*, "Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior", Phys. Status Solidi RRL, 8(10): 857, 2014.10.15. [PDF]

12. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*, "Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes", Appl. Phys. Lett., 105(7): 072902, 2014.08.18. [PDF]

11. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woojin Jeon, Taehwan Moon, Cheol Seong Hwang*, "Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes", Phys. Status Solidi RRL, 8(6): 532, 2014.06.20. [PDF] [SI]

10. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Cheol Seong Hwang*, "The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity", Appl. Phys. Lett., 104(7): 072901, 2014.02.18. [PDF] [SI]

2009-2013

9. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, Cheol Seong Hwang*, "Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature, Appl. Phys. Lett., 102(24): 242905, 2013.06.17. [PDF] [SI]

8. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Hyo Kyeom Kim, Cheol Seong Hwang*, "Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes", Appl. Phys. Lett., 102(11): 112914, 2013.03.18. [PDF]

7. Woo Young Park, Min Hyuk Park, Jong Ho Lee, Jung Ho Yoon, Jeong Hwan Han, Jung-Hae Choi*, Cheol Seong Hwang*, "Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering", Sci. Rep., 2: 939, 2012.12.07. [PDF] [SI]

6. Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, Yu Jin Kim, Jeong Hwan Kim, Jong Ho Lee, Cheol Seong Hwang*, "Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage", Adv. Funct. Mater., 21(22): 4305-4313, 2011.11.22. [PDF][SI]

5. Hyun Ju Lee, Min Hyuk Park, Yu Jin Kim, Cheol Seong Hwang*, Jeong Hwan Kim, Hiroshi Funakubo, Hiroshi Ishiwara, "Improved ferroelectric property of very thin Mn-doped BiFeO3 films by an inlaid Al2O3 tunnel switch", J. Appl. Phys., 110(7): 074111, 2011.10.01. [PDF]

4. Hyun Ju Lee, Min Hyuk Park, Gun Hwan Kim, Jun Yeong Seok, Yu Jin Kim, Cheol Seong Hwang*, An Quan Jiang, "Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors", J. Appl. Phys., 109(11): 114113, 2011.06.15. [PDF]

3. Hyun Ju Lee, Min Hyuk Park, Yo-Sep Min, Guylhaine Clavel, Nicola Pinna, Cheol Seong Hwang*, "Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination", J. Phys. Chem. C, 114(29): 12736, 2010.07.01. [PDF]

2. Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park, An-Quan Jiang, Cheol Seong Hwang*, "Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions", Appl. Phys. Lett., 96(21): 212902, 2010.05.25. [PDF]

1. Gun Hwan Kim, Hyun Ju Lee, An Quan Jiang, Min Hyuk Park, Cheol Seong Hwang*, "An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements", J. Appl. Phys., 105(4): 044106, 2009.02.23. [PDF]