Selected Papers of PI
An invited review paper summarizing the first decade of research on fluorite-structured ferroelectrics in Nature Reviews Materials.
2. An invited review paper in Materials Science & Engineering R as a co-corresponding author (2021) IF=36.214
An invited review paper summarizing researches on ultra-thin ferroelectrics.
The most cited review paper in the field of fluorite-structured ferroelectrics.
Cited > 765 times.(Google Scholar)
The giant negative electrocaloric effect in Hf0.5Zr0.5O2 thin film was first reported.
Cited > 102 times.(Google Scholar)
The electrostatic supercapacitor based on HZO thin film was first suggested.
Cited > 285 times.(Google Scholar)
Selected as the Front Cover
The ferroelectricity and antiferroelectricity in nanolaminates and superlattices based on non-ferroelectric HfO2 and ZrO2. Selected as a feature article of Applied Physics Reviews and highlighted in Scilight.
Cited > 49 times.(Google Scholar)
The first review paper focusing on the domains and domain dynamics of fluorite-structured ferroelectrics.
Cited > 28 times.(Google Scholar)
It was first demonstrated that the fluorite-structured ferroelectrics could be promising for pyroelectric energy harvesting, electrocaloric cooling, and IR sensing.
Cited > 173 times. (Google Scholar)
Effect of various dopants on phase transition in hafnia was studied for various dopants such as Si, Zr, Al, and Gd.
Cited > 63 times. (Google Scholar)
The energy storage performance of HZO thin film could be improved by suppressing the monoclinic phase formation with increasing film thickness.
Cited > 71 times. (Google Scholar)
The fluorite-structured antiferroelectrics were comprehensively reviewed for the first time.
Cited > 51 times. (Google Scholar)
Effect of film thickness and annealing temperature on polymorphism and ferroelectricity of Hf 0.5 Zr 0.5 O 2 film was studied.
Cited > 534 times. (Google Scholar)
Texture-controlled (111)-HZO formed on Pt electrode was studied, and the origin of the disappearance of ferroelectricity was studied.
Cited > 301 times. (Google Scholar)
Memory devices based on ferroelectric HfO2 was comprehensively reviewed. The most cited article of the journal published in 2018.
Cited > 289 times. (Google Scholar)
The structural evolution of polycrystalline doped HfO2 films were quantitatively examined based on the Rietveld refinement.
Cited > 228 times. (Google Scholar)