Book Chapters

16. Ruben Alcala, Tony Schenk, Min Hyuk Park, Uwe Schroeder, "7.2 - Field cycling behavior of ferroelectric HfO2-based capacitors" in "Ferroelectricity in Doped Hafnium Oxide (Second Edition)" Woodhead Publishing Series in Electronic and Optical Materials, 2025, Pages 573-586

15. Min Hyuk Park, Patrick D. Lomenzo, Michael Hoffmann, Cheol Seong Hwang, "5.4 - Pyroelectricity" in "Ferroelectricity in Doped Hafnium Oxide (Second Edition)" Woodhead Publishing Series in Electronic and Optical Materials, 2025, Pages 371-395

14. Cheol Seong Hwang, Min Hyuk Park, Uwe Schroeder, Everett D. Grimley, James M. LeBeau, "5.1 - Ferroelectricity: Phases and phase transitions" in "Ferroelectricity in Doped Hafnium Oxide (Second Edition)" Woodhead Publishing Series in Electronic and Optical Materials, 2025, Pages 305=341

13. Min Hyuk Park, Ji-Hoon Ah, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang, "4.2 - Impact of Zr content in atomic layer deposited Hf1−xZrxO2 thin films" in "Ferroelectricity in Doped Hafnium Oxide (Second Edition)" Woodhead Publishing Series in Electronic and Optical Materials, 2025, Pages 213-238

12. Min Hyuk Park, Tony Schenk, Uwe Schroeder, "4.1 - Dopants in atomic layer deposited HfO2 thin films" in "Ferroelectricity in Doped Hafnium Oxide (Second Edition)" Woodhead Publishing Series in Electronic and Optical Materials, 2025, Pages 189-212

11. Min Hyuk Park, Bohan Xu, Tony Schenk, Ulrich Böttger, Cheol Seong Hwang, Akira Toriumi, Uwe Schroeder, "3.4 - Effect of film thickness on the ferroelectric properties" in "Ferroelectricity in Doped Hafnium Oxide (Second Edition)" Woodhead Publishing Series in Electronic and Optical Materials, 2025, Pages 99-121

10. Min Hyuk Park (2020), ‪Polymorphism of Hafnia-Based Ferroelectrics for Ferroelectric Field-Effect Transistors, Ch. IV-2 in “Ferroelectric-Gate Field Effect Transistor Memories” second edition, 359–373, Springer-Verlag Berlin, Berlin, Germany. 

9. Min Hyuk Park and Cheol Seong Hwang*, (2020), Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View, Ch. IV-2 in “Ferroelectric-Gate Field Effect Transistor Memories” second edition, 295-310, Springer-Verlag Berlin, Berlin, Germany. 

8. Franz P. G. Fengler, Min Hyuk Park, Tony Schenk, Milan Pešić, Uwe Schroeder, Field cycling behavior of ferroelectric HfO2 based capacitors, Ch. 9.2. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0. 

7. Min Hyuk Park, Tony Schenk, Cheol Seong Hwang, Uwe Schroeder, Impact of electrodes on the ferroelectric properties, Ch. 8 in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0. 

6. Min Hyuk Park, Michael Hoffmann, Cheol Seong Hwang, Pyroelectric and electrocaloric effects and their applications, Ch. 5.2. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0. 

5. Min Hyuk Park, Takao Shimizu, Hiroshi Funakubo, Uwe Schroeder, Structural origin of temperature dependent ferroelectricity, Ch. 5.1. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0.  

4. Min Hyuk Park, Tony Schenk, Sergej Starschich, Chris M. Fancher, Han Joon Kim, Ullich Boettger, Cheol Seong Hwang, Akira Toriumi, Xuan Tian, Uwe Schroeder, Effect of surface/interface energy and stress on the ferroelectric properties, Ch. 3.5. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0. 

3. Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang, Impact of Zr content in atomic layer deposited Hf1-xZrxO2 thin films, Ch. 3.2. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0. 

2. Min Hyuk Park, Tony Schenk, and Uwe Schroeder, Dopants in atomic layer deposited HfO2 thin films, Ch. 3.1. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0.  

1.   Min Hyuk Park and Cheol Seong Hwang*, (2016), Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View, Ch. IV-2 in “Ferroelectric-Gate Field Effect Transistor Memories”, 295-310, Springer-Verlag Berlin, Berlin, Germany.