Domestic
2024
111. Y. H. Cho, G. H. Park, D. H. Lee, T. Kwon, and M. H. Park, "Comparative study on Nucleation Limited Switching in HfO2/ZrO2 Nanolaminates and (Hf,Zr)O2 Solid Solutions ", 한국재료학회 추계학술대회, Korea, Nov. 2024. (Poster)
110. H. S. Choi, D. H. Han, H. W. Jeong, J. Kim, and M. H. Park, "Atomic Layer Deposited InGaZnOx Thin-Film Transistors for Low Subthreshold Swing and High Mobility", 한국재료학회 추계학술대회, Korea, Nov. 2024. (Poster)
109. H. W. Jeong, Y. H. Cho, and M. H. Park, "Defect Engineering via Sputtering in Non-volatile Antiferroelectric HfxZr1-xO₂ Thin Films for Low-power, Highendurance", 한국재료학회 추계학술대회, Korea, Nov. 2024. (Poster)
108. G. H. Park, Y. H. Cho, D. H. Lee, S. H. Kim, D. H. Han, H. J. KiM, Y. Lee, and M. H. Park, "Crystallographically Controlled N-Terminated (111)-Textured TiN Electrodes for Enhanced Low-Voltage Switching (0.8 V) in Ferroelectric Hf0.5Zr0.5O2 Capacitors",
한국재료학회 추계학술대회, Korea, Nov. 2024. (Oral)
107. H. J. Choi, S. Y. Lee, K. Yang, J. Y. Park, Y. Y. Kim, H. W. Jeong, H. S. Choi, J. W. Lee, D. I. Han, and M. H. Park, ""Effect of Nitrogen Atom Doping on Molybdenum Electrode for Enhancing the Reliability of Hf0.5Zr0.5O2 Ferroelectric Capacitors", 대한금속재료학회 추계학술대회, Korea, Oct. 2024. (Oral)
106. J. W. Lee, Y. H. Cho, H. W. Jeong, and M. H. Park, "Demonstration of wake-up free and high endurance (~10 10 cycles) Hf0.5Zr0.5O2 thin film via alloy electrodes", 대한금속재료학회 추계학술대회, Korea, Oct.2024. (Oral)
105. D. H. Han, S. Y. Kim, Y. Lee, Y. Y. Kim, W. Jeon, and M. H. Park, "Impact of deposition temperature on structural and electrical properties of Hf0.5Zr0.5O2 film on (111)-oriented TiN film", 한국세라믹학회 추계학술대회, Korea, Oct. 2024. (Oral)
104. S. H. Kim, Y. Lee, D. H. Lee, and M. H. Park, "Sub-5 nm Hf0.5Zr0.5O2 films with Pr higher than 30 μC/cm2 in Mo/HZO/TiO2/SiO2/Si capacitor", 한국세라믹학회 추계학술대회, Korea, Oct. 2024. (Oral)
103. J. Y. Park, J. W. Lee, K. Yang, H. J. Choi, S. Y. Lee, D. I. Han, and M. H. Park, "Mo/Hf0.5Zr0.5O2/TiN/Mo Structure for Enhanced Dielectric Constant with Low Leakage Current Density for DRAM Capacitor", 대한금속재료학회 춘계학술대회, Korea, Apr. 2024. (Poster)
102. J. W. Lee, S. H. Kim, Y. Lee, S. Park, and M. H. Park, "Low-Thermal-Budget (350 ℃) Ferroelectric Hf0.5Zr0.5O2 Thin Film by Thermally Accelerating Nucleation During Atomic Layer Deposition", 대한금속재료학회 춘계학술대회, Korea, Apr. 2024. (Oral)
101. S. H. Kim, Y. Lee, D. H. Lee, and M. H. Park, "Sub-5 nm Hf0.5Zr0.5O2 films with Pr higher than 30 μC/cm2 in Mo/HZO/TiO2/SiO2/Si capacitor", 2024 한국세라믹학회 춘계학술대회, Korea, Apr. 2024. (Oral)
100. D. H. Lee, G. H. Park, Y. H. Cho, S. H. Kim, K. Yang, J. W. Lee, and M. H. Park, "Modulation of domain dynamics and kinetics in ferroelectric Hf0.5Zr0.5O2 thin films using electrode materials", 2024 한국세라믹학회 춘계학술대회, Korea, Apr. 2024. (Oral)
99. J. W. Lee, S. H. Kim, Y. Lee, and M. H. Park, "Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350 ℃ by Thermally Accelerated Nucleation during Atomic Layer Deposition", 제 31회 반도체학술대회, Korea, Jan. 2024. (Oral)
98. S. H. Kim, Y. Lee, D. H. Lee, and M. H. Park, "Interface engineering for enhancement of ferroelectricity in sub-5nm ultrathin Hf0.5Zr0.5O2 films", 제 31회 반도체학술대회, Korea, Jan. 2024. (Oral)
97. Y. H. Cho, G. H. Park, D. H. Lee, T. Kwon, and M. H. Park, "Compare the Switching Kinetics of HfO2-ZrO2 Nanolaminates Structures and (Hf,Zr)O2 Solid Solutions Utilizing the Nucleation Limited Switching Model", Nano Convergence Conference 2024, Korea, Jan. 2024. (Poster)
96. H. W. Jeong, S. H. Kim, K. Yang, and M. H. Park, "The Remote Scavenging Effect of TiN/Ti/TiN Electrode Enhances the Ferroelectricity of Hf0.5Zr0.5O2 Thin Films", Nano Convergence Conference 2024, Korea, Jan. 2024. (Poster)
2023
95. J. W. Lee, S. H. Kim, J. K. Yang, J. Y. Park, D. H. Lee, G. H. Park, and M. H. Park, "Low Thermal Budget HZO Thin Film by Controlling Deposition Temperature," 2023 Korean Society for Surface Engineering Spring Conference, Korea, May 2023. (Poster)
94. J. K. Yang, J. Y. Park, D. H. Lee, S. H. Kim, G. H. Park, K. Y. Kim, J. R. Ryu, G. H. Kim, C. S. Choi, and M. H. Park, "Ferroelectricity Enhancement and Mitigation of the Wake-Up Effect of Hf₀.₅Zr₀.₅O₂ Thin Film Deposited on Oxidized W Electrode," 2023 Korean Institute of Metals and Materials Spring Conference, Korea, Apr. 2023. (Oral)
93. H. W. Jung, S. H. Kim, J. K. Yang, Y. H. Lee and M. H. Park, "The Remote Scavenging Effect of Ti on Fluorite-Structured Ferroelectric Hf₀.₅Zr₀.₅O₂ Thin Film for Low Thermal Budget," 2023 Korean Institute of Metals and Materials Spring Conference, Korea, Apr. 2023. (Poster)
92. H. W. Jung, S. H. Kim, J. K. Yang, Y. H. Lee and M. H. Park, "The Reduction of Interfacial Layer in (Hf,Zr)O₂ Thin Film by the Scavenging Effect from the TiN/Ti/TiN Layer," 2023 Korean Ceramic Society Spring Conference, Korea, Apr. 2023. (Poster)
91. S. H. Kim, Y. H. Lee, H. W. Jung, D. H. Lee, and M. H. Park, "Giant Ferroelectricity in Mo/Hf₀.₅Zr₀.₅O₂/TiOₓ/SiOₓ/Si Capacitor at Sub-5-nm Scale," 2023 Korean Ceramic Society Spring Conference, Korea, Apr. 2023. (Oral)
90. M. H. Park, S. H. Kim, H. W. Jung, and J. K. Yang, "Ferroelectric (Hf,Zr)O₂/Si Interface Engineering for Advanced Ferroelectric Field-Effect Transistors," 29th Korean Semiconductor Conference, Korea, Feb. 2023. (Oral)
89. D. H. Lee, G. H. Park, J. W. Lee, S. H. Kim, and M. H. Park, "Dynamics of Domain Wall Motion and Polarization Switching Kinetics of Ferroelectric Hf₀.₅Zr₀.₅O₂ Thin Film on Different Electrode Materials," 29th Korean Semiconductor Conference, Korea, Feb. 2023. (Oral)
88. H. W. Jung, S. H. Kim, J. K. Yang, Y. H. Lee, and M. H. Park, "Reduction of SiOₓ Interface Layer Utilizing the Remote Scavenging Effect of Ti Layer on Ferroelectric (Hf,Zr)O₂ Thin Film," 29th Korean Semiconductor Conference, Korea, Feb. 2023. (Poster)
87. M. H. Park, S. H. Kim, H. W. Jung, and J. K. Yang, "Material Issues in Fluorite-Structured Ferroelectrics," Dielectric Union Symposium 2023, Korea, Jan. 2023. (Oral)
86. H. W. Jung, S. H. Kim, J. K. Yang, Y. H. Lee, and M. H. Park, "The Low Thermal Budget Remote Scavenging Effect of Ti on the Ferroelectric Hf₀.₅Zr₀.₅O₂ Thin Film," Dielectric Union Symposium 2023, Korea, Jan. 2023. (Poster)
2022
85. S. H. Kim, K. Yang, D. H. Lee, J. Y. Park, G. H. Park, H. W. Jeong, and M. H. Park, "Enhanced Ferroelectricity and Alleviated Depolarization in Ultra-thin Hf0.5Zr0.5O2-based MFIS capacitor by Interface Engineering", The Korean Institute of Surface Engineering 2022 Fall Meeting, Korea, Nov. 2022. (Oral)
84. M. H. Park, "Antiferroelectricity in Fluorite-Structured Oxides", The Korean Ceramic Society 2022 Fall Meeting, Korea, Oct. 2022. (Oral)
83. Y. Lee, Jacob L. Jones, and M. H. Park, "강유전 Hf0.5Zr0.5O2의 결정학적 우선 방위와 특성에 관한 연구", The Korean Ceramic Society 2022 Fall Meeting, Korea, Oct. 2022. (Oral)
82. K. Yang, D. H. Lee, J. Y. Park, S. H. Kim, G. H. Park, G. Y. Kim, J. J. Ryu, G. H. Kim, S. Y. Choi, and M. H. Park, "The Effects of the W Electrode on Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films", The Korean Institute of Surface Engineering 2022 Spring Meeting, Korea, Jun. 2022. (Poster)
81. J. Y. Park, K. Yang, D. H. Lee, S. H. Kim, G. H. Park, and M. H. Park, "A comprehensive study on the electrical properties of Hf1-xZrxO2 thin films with various thickness and compositions on Mo electrode", The Korean Institute of Surface Engineering 2022 Spring Meeting, Korea, Jun. 2022. (Oral)
80. K. Yang, D. H. Lee, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, G. Y. Kim, J. J. Ryu, G. H. Kim, S. Y. Choi, and M. H. Park, "A study on the mitigation of the wake-up effect of the ferroelectric Hf0.5Zr0.5O2 thin film deposited on the W electrode", Materials Research Society of Korea, Spring Conference 2022, Korea, May. 2022. (Oral)
79. J. Y. Park, K. Yang, D. H. Lee, S. H. Kim, G. H. Park, and M. H. Park, "Electrical properties according to the thickness and composition of Hf1-xZrxO2 thin films grown on Mo electrodes", Materials Research Society of Korea, Spring Conference 2022, Korea, May. 2022. (Poster)
78. M. H. Park K. Yang, D. H. Lee, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, "Interfacial Engineering of Hafnia-Based Ceramic Thin Films for Ferroelectricity Enhancement", The Korean Ceramic Society 2022 Spring Meeting, Korea, Apr. 2022. (Oral)
77. S. H. Kim, K. Yang, D. H. Lee, J. Y. Park, G. T. Yu, G. H. Park, and M. H. Park, "Utilizing MoO2/Mo electrode to achieve wake-up free giant ferroelectricity in Hf0.5Zr0.5O2 thin film", The Korean Ceramic Society 2022 Spring Meeting, Korea, Apr. 2022. (Oral)
76. K. Yang, D. H. Lee, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, G. Y. Kim, J. J. Ryu, G. H. Kim, S. Y. Choi, and M. H. Park, "A study on the mitigation of the wake-up effect of the ferroelectric Hf0.5Zr0.5O2 thin film deposited on the W electrode", The Korean Ceramic Society 2022 Spring Meeting, Korea, Apr. 2022. (Oral)
75. J. Y. Park, K. Yang, D. H. Lee, S. H. Kim, G. H. Park, and M. H. Park, "A study on the effect of composition and thickness on ferroelectricity in Hf1-xZrxO2 thin films", The Korean Ceramic Society 2022 Spring Meeting, Korea, Apr. 2022. (Poster)
74. D. H. Lee, K. Yang, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, and M. H. Park, "원자층 증착공정을 통해 제작된 TiN/Hf0.5Zr0.5O2/TiN 강유전체 캐패시터의 증착온도에 따른 잔류불순물과 그에 따른 분극 반전 특성 변화", The Korean Ceramic Society 2022 Spring Meeting, Korea, Apr. 2022. (Poster)
73. M. H. Park, K. Yang, D. H. Lee, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, "강유전체 소재 물성 및 소자 응용", 2022년도 춘계 New Horizon 심포지엄, Korea, Apr. 2022. (Poster)
72. D. H. Lee, G. T. Yu, J. Y. Park, S. H. Kim, K. Yang, G. H. Park and M. H. Park, "원자층 증착 공정을 통해 제작된 플루오라이트 구조 강유전체의 잔류 불순물에 따른 분극 반전 특성", 2022 Dielectric Symposium, Korea, Feb. 2022. (Poster)
71. S. H. Kim, G. T. Yu, G. H. Park, D. H. Lee, J. Y. Park, K. Yang, and M.H. Park, "Ti 박막층의 Direct Scavenging Effect를 이용한 Mo/Hf0.3Zr0.7O2/Si capacitor의 반강유전성 및 endurance 특성의 개선에 대한 연구", The 29th Korean Conference on Semiconductors, Korea, Jan. 2022. (Oral)
70. K. Yang, J. Y. Park, D. H. Lee, J. J. Ryu, K. H. Kim, and M.H. Park, "W 전극 위에 증착된 플루오라이트 구조 Hf0.5Zr0.5O2 강유전성 박막의 우수한 강유전성에 관한 연구", The 29th Korean Conference on Semiconductors, Korea, Jan. 2022. (Oral)
69. S. H. Kim, G. T. Yu, G. H. Park, D. H. Lee, J. Y. Park, K. Yang, and M. H. Park, "Improvement of HZO/Si interface properties in Mo/Hf 0.3 Zr 0.7 O 2 /Si capacitor using Ti thin layer", Nano Convergence Conference 2022, Korea, Jan. 2022. (Poster)
68. K. Yang, D. H. Lee, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, J. J. Ryu, G. H. Kim, and M. H. Park, "Ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin film enhanced by W Electrode", Nano Convergence Conference 2022, Korea, Jan. 2022. (Oral)
2021
67. G. T. Yu, D. H. Lee, J. Y. Park, S. H. Kim, and M. H. Park, "Mo 하부전극을 통한 Wake-up 현상 억제 Hf 0.5 Zr 0.5 O 2 캐패시터의 제작 및 특성 평가", Material Research Society of Korea 2021 Fall Meeting, Korea, Nov. 2021. (Oral)
66. S. H. Kim, and M. H. Park, "Ti 박막의 Direct Scavenging Effect를 이용한 Mo/Hf 0.3 Zr 0.7 O 2 /Si capacitor의 반강유전성 개선에 대한 연구", Material Research Society of Korea 2021 Fall Meeting, Korea, Nov. 2021. (Oral)
65. K. Yang, D. H. Lee, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, E. B. Lee, and M. H.Park, "전계 유도 강유전성 HfO 2 -ZrO 2 나노라미네이트 박막의 에너지 변환 및 저장 특성에 관한 연구", Material Research Society of Korea 2021 Fall Meeting, Korea, Nov. 2021. (Oral)
64. D. H. Lee, and M. H. Park, "원자층 증착 공정의 증착 온도에 따른 Hf0.5Zr0.5O2 박막의 분극 반전특성에 대한 영향", Material Research Society of Korea 2021 Fall Meeting, Korea, Nov. 2021. (Oral)
63. M. H. Park, D. H. Lee, K. Yang, J. Y. Park, S. H. Kim, G. T. Yu, G. H. Park, E. B. Lee, "산화하프늄 기반 강유전체의 계면 제어를 통한 강유전성 강화", Material Research Society of Korea 2021 Fall Meeting, Korea, Nov. 2021. (Oral)
62. S. H. Kim, G. T. Yu, D. H. Lee, J. Y. Park, G. H. Park, and M. H. Park, "Mo/Hf 0.3 Zr 0.7 O 2 /n+-Si의 Ti 전극 기반 Direct scavenging Effect를 활용한 SiO x 계면층 생성 억제 및 반강유전성 개선에 대한 연구", The Korean Institute of Surface Engineering 2021 Spring Meeting, Korea, Jun. 2021. (Poster)
61. G. T. Yu, D. H. Lee, J. Y. Park, S. H. Kim, and M. H. Park, "Wake-up 현상이 억제된 강유전성 Mo/Hf 0.5 Zr 0.5 O 2 /Mo 캐패시터의 제작 및 특성 평가", The Korean Institute of Surface Engineering 2021 Spring Meeting, Korea, Jun. 2021. (Poster)
60. M. H. Park, "원자층증착법으로 증착된 산화하프늄 기반 강유전체 메모리 소자 응용의 리뷰", The Korean Institute of Surface Engineering 2021 Spring Meeting, Korea, Jun. 2021. (Oral)
59. M. H. Park, "Fluorite 구조 강유전체 기반 반도체 소자의 소재-소자 집적 관점의 리뷰", The Korean Ceramic Society 2021 Spring Meeting, Korea, Jun. 2021 (Oral)
58. M. H. Park, D. H. Lee, K. Yang, J. Y. Park, G. T. Yu, "Review of defect chemistry in fluorite-structured ferroelectrics", The Korean Institute of Metals and Materials 2021 Spring Meeting, Korea, Apr. 2021. (Oral)
57. J. Y. Park, D. H. Lee, K. Yang, S. H. Kim, E. B. Lee, and M. H. Park, "강유전성 Hf0.5Zr0.5O2 박막에서 분극 스위칭 펄스 폭의 최적화에 의한 wake-up 효과 완화 및 endurance 향상", 2021 Dielectric Symposium, Korea, Feb. 2021. (Poster)
56. K. Yang, D. H. Lee, J. Y. Park, and M. H. Park, "8.8 nm 반강유전성 HfO 2 /ZrO 2 nanolaminate 박막의 전기열량효과 (electrocaloric)의 발현 및 계산", 2021 Dielectric Symposium, Korea, Feb. 2021. (Poster)
55. D. H. Lee, K. Yang, J. Y. Park, S. H. Kim, G. T. Yu, and M. H. Park, "Hf 0.5 Zr 0.5 O 2 박막 분극 반전 특성의 원자층 증착 온도 의존성", 2021 Dielectric Symposium, Korea, Feb. 2021. (Poster)
54. M. H. Park, "A brief review on semiconductor devices based on fluorite-structured ferroelectrics from the materials-devices integration perspective", 2021 Dielectric Symposium, Korea, Feb. 2021. (Oral)
53. D. H. Lee, K. Yang, J. Y. Park, S. H. Kim, G. T. Yu, and M. H. Park, "Hf 0.5 Zr 0.5 O 2 박막의 원자층 증착 온도에 따른 강유전체 분극 반전 키네틱스에 대한 영향", The 28th Korean Conference on Semiconductors, Jan. 2021. (Poster)
52. J. Y. Park, D. H. Lee, K. Yang, S. H. Kim, E. B. Lee, and M. H. Park, "9.2nm Hf0.5Zr0.5O2 박막에서 분극 스위칭 펄스의 최적화에 의한 Wake-Up 효과의 완화", The 28th Korean Conference on Semiconductors, Jan. 2021. (Poster)
51. K. Yang, D. H. Lee, J. Y. Park, and M. H. Park, "원자층증착법으로 증착된 전계 유도 강유전성 Hf 0.3 Zr 0.7 O 2 박막의 전기열량효과에 대한 연구", The 28th Korean Conference on Semiconductors, Jan. 2021. (Poster)
50. M. H. Park, D. H. Lee, K. Yang, J. Y. Park, "Effect of Defects on Ferroelectricity in Hafnia Based Thin Films", The 28th Korean Conference on Semiconductors, Jan. 2021. (Oral)
2020
49. M. H. Park, "Effect of defects on hafnia based ferroelectrics", The Korean Ceramic Society 2020 Fall Meeting, Korea, Nov. 2020. (Oral)
48. M. H. Park, "산화하프늄 기반 박막의 강유전성 결정상 형성 메커니즘에 대한 연구", The Korean Ceramic Society 2020 Spring Meeting, Korea, Jul. 2020. (Oral)
47. M. H. Park, H. J. Kim, G. Y. Lee, J. H. Park, Y. H. Lee, Y. J. Kim, T. H. Moon, K. D. Kim, S. D. Hyun, H. Y. Park, H. J. Chang, J. H. Choi, and C. S. Hwang, "Ferroelectricity in hafnia/zirconia nanolaminates and superlattices", 2020 Dielectric Symposium, Korea, Feb. 2020. (Oral)
46. M. H. Park, Y. H. Lee, C. S. Hwang, "A Study on the Ferroelectric Phase Formation in Doped Hafnia Thin Films Based on Classical Nucleation Theory", The 27th Korean Conference on Semiconductors, Jan. 2020. (Oral)
2019
45. M. H. Park, Y. H. Lee, C. S. Hwang, "고전적 핵성성 이론에 기반한 도핑된 산화하프늄 박막의 강유전성 발현 메커니즘에 대한 연구", The Korean Institute of Surface Engineering 2019 Fall Meeting, Nov. 2019. (Oral)
44. Min Hyuk Park, "Atomic Layer Deposition for emerging ferroelectric memories", 2nd Atomic Craft Workshop, Jul. 2019. (Poster)
43. Min Hyuk Park, "비휘발성 메모리 적용을 위한 원자층 증착된 산화하프늄-산화지르코늄 고용체 박막의 강유전성 결정상의 생성 메커니즘에 대한 연구", The Korean Institute of Surface Engineering 2019 Spring Meeting, May. 2019. (Oral)
42. Min Hyuk Park, "A study on the Temperature Dependent Phase Transition in Fluorite Structure Ferroelectrics", The Korean Ceramic Society 2019 Spring meeting, Apr. 2019. (Oral)
2018
41. Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Beak Su Kim and Cheol Seong Hwang, "Dispersion in ferroelectric switching performance of polycrystalline Hf 0.5 Zr 0.5 O 2 thin films", The 25th Korean Conference on Semiconductors, High one Resort, Gangwon-do, Feb. 5-7th, 2018. (Oral)
2017
40. Keum Do Kim, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Seung Dam Hyun, Hyeonwoo Park, and Cheol Seong Hwang, “Stabilization of tetragonal phase in Hf0.5Zr0.5O2 thin films induced by low deposition temperature during atomic layer deposition”, The 24th Korean Conference on Semiconductors, Vivaldi Park, Gangwon-do, Feb. 13-15th, 2017. (Oral)
39. Han Joon Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang, “Involvement of an intermediate nonpolar phase during polarization switching in the Hf0.4Zr0.6O2 thin Films”, The 24th Korean Conference on Semiconductors, Vivaldi Park, Gangwon-do, Feb. 13-15th, 2017. (Oral)
38. Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, and Cheol Seong Hwang, “Diode Characteristics of the Pt/Al2O3/SrTiO3 Structure with Two-Dimensional Electron Gas and Its Time-Dependent Resistance Evolution”, The 24th Korean Conference on Semiconductors, Vivaldi Park, Gangwon-do, Feb. 13-15th, 2017. (Oral)
37. Yu Jin Kim, Hyeon woo Park, Hiroyuki Yamada, Taehwan Moon, Young Jae Kwon, Cheol Hyun An, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Min Hyuk Park, and Cheol Seong Hwang, “Non-hysteretic Negative Capacitance in Al2O3/BaTiO3 Bilayers”, The 24th Korean Conference on Semiconductors, Vivaldi Park, Gangwon-do, Feb. 13-15th, 2017. (Poster)
36. Seung Dam Hyun, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeonwoo Park, Yong Bin Lee, and Cheol Seong Hwang, “Study on ferroelectric switching kinetics in polycrystalline Hf0.5Zr0.5O2 films”, The 24th Korean Conference on Semiconductors, Vivaldi Park, Gangwon-do, Feb. 13-15th, 2017. (Poster)
2016
35. Taehwan Moon, Hae Jun Jung, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Sang Woon Lee and Cheol Seong Hwang, “Influence of O3 treatment on carrier density of two-dimensional electron gas at a-Al2O3/SrTiO3 interface”, The 23rd Korean Conference on Semiconductors, Feb. 22-24th, 2016. (Poster)
34. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, and Cheol Seong Hwang, “Decreasing Interfacial Layers of The Ferroelectric Hf0.5Zr0.5O2 Film Capacitors by Wake-Up Effect” The 23rd Korean Conference on Semiconductors, Feb. 22-24th, 2016. (Oral)
33. Seung Dam Hyun, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Teahwan Moon, Keum Do Kim, Young Hwan Lee, and Cheol Seong Hwang, “Study on the Ferroelectric Domain Switching Kinetics in Dielectric/Ferroelectric Capacitors”, The 23rd Korean Conference on Semiconductors, Feb. 22-24th, 2016. (Poster)
32. Keum Do Kim, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, and Cheol Seong Hwang, “Analysis on the Evolution of the Ferroelectricity in Undoped HfO2 Films Prepared by Atomic Layer Deposition”, The 23rd Korean Conference on Semiconductors, Feb. 22-24th, 2016. (Poster)
31. Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Keum Do Kim, Cheol Hyun An, Young Hwan Lee, Seung Dam Hyun, and Cheol Seong Hwang, “Interface Charge Controlled Negative Capacitance in Dielectric/Ferroelectric Thin Films”, The 23rd Korean Conference on Semiconductors, Feb. 22-24th, 2016. (Poster)
30. Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang, “Preparation and Characterization of Ferroelectric Hf0.5Zr0.5O2 Films by RF-Sputtering Method”, The 23rd Korean Conference on Semiconductors, Feb. 22-24th, 2016. (Poster)
29. Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang, “Characterization of Ferroelectric Hf0.5Zr0.5O2 Films by RF-sputtering Method”, The 12th joint symposium on ferroelectrics, 31th. Jan. 31th- Feb. 2nd, 2016. (Poster)
28. Han Joon Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang, “Study on the Two Step Polarization switching in Hf0.4Zr0.6O2 Thin Film Based on the First Order Phase Transition Theory” The 12th joint symposium on ferroelectrics, Jan. 31th- Feb. 2nd, 2016. (Poster)
27. Keum Do Kim, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang, “Ferroelectric Engineered HfO2 Films Induced by Gran Size Engineering through Atomic Layer Deposition Temperature Control”, The 12th joint symposium on ferroelectrics, Jan. 31th- Feb. 2nd, 2016. (Poster)
2015
26. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, and Cheol Seong Hwang, "Thin HfxZr1-xO2 Films (x=0.1-0.4) for a Monolithic Device for Various Energy-related Applications", The 22nd Korean Conference on Semiconductors, Feb. 10-12th, 2015 (Oral)
25. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, and Cheol Seong Hwang, "Ferroelectric Hf0.5Zr0.5O2 Thin Films with Al2O3 inter-layer as a Serial Resistor on Ferroelectric Switching", The 22nd Korean Conference on Semiconductors, Feb. 10-12th, 2015. (Oral, Awarded)
24. H. J. Kim, M. H. Park, Y. J. Kim, T. Moon, K. D. Kim, Y. H. Lee, and C. S. Hwang, "Study on the wake-up phenomenon of ferroelectric Hf0.5Zr0.5O2 thin films by polarization switching and discharge behavior", The 10th joint symposium on ferroelectrics, Feb. 1-3rd, 2015. (Poster)
23. Y. J. Kim, M. H. Park, Y. H. Lee, H. J. Kim, W. Jeon, T. Moon, K. D. Kim, D. S. Jeong, H. Yamada, and C. S. Hwang, "A New Approach to the Negative Capacitance of Ferroelectric Thin Films", The 10th joint symposium on ferroelectrics, Feb. 1-3rd, 2015. (Poster)
22. M. H. Park, H. J. Kim, Y. J. Kim, T. Moon, K. D. Kim, Y. H. Lee, and C. S. Hwang, "Antiferroelectric HfxZr1-xO2 thin films for the energy-related applications", The 10th joint symposium on ferroelectrics, Feb. 1-3rd, 2015. (Oral)
2014
21. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Taehwan Moon, and Cheol Seong Hwang, "Deposition of Thicker Ferroelectric (Hf,Zr)O2 Thin Films using Al2O3 Inter-Layer", The 21st Korean Conference on Semiconductors, Feb. 24-26th, 2014. (Poster, Awarded)
20. Yu jin Kim, Min Hyuk Park, Han joon Kim, Tae Hwan Moon, and Cheol Seong Hwag, "Stabilization of Negative Capacitance in Ferroelectric Thin Films", The 21st Korean Conference on Semiconductors, Feb. 24-26th, 2014. (Oral)
19. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, and Cheol Seong Hwang, "Evolution of Phases and Ferroelectric Properties of Thin Hf0.5Zr0.5O2 Films According to the Thickness and Annealing Temperature", The 21st Korean Conference on Semiconductors, Feb. 24-26th, 2014. (Oral, Awarded)
18. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, and Cheol Seong Hwang, "The Factors that Determine the Ferroelectricity in Thin Hf0.5Zr0.5O2 Films", The 10th joint symposium on ferroelectrics, Feb. 16-18th, 2014. (Poster)
17. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Taehwan Moon, and Cheol Seong Hwang, "Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films with Al2O3 inter-layer", The 10th joint symposium on ferroelectrics, Feb. 16-18th, 2014. (Poster)
2009-2013
16. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Hyo Kyeom Kim, Woongkyu Lee, Il-Hyuk Yu, and Cheol Seong Hwang, "The effects of grain size on the electrical properties of ferroelectric Hf1-xZrxO2 thin films", The 20th Korean Conference on Semiconductors, Feb. 4-6th, 2013. (Awarded)
15. Yu Jin Kim, Min Hyuk Park, Hyung-Suk Jung, Han Joon Kim, and Cheol Seong Hwang "The observation of Negative Capacitance at Room Temperature from Switching Domains of Ferroelectric Thin Films" The 20th Korean Conference on Semiconductors, Feb. 4-6th, 2013.
14. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Hyo Kyeom Kim, Il-Hyuk Yu, and Cheol Seong Hwang, "Examination on the ferroelectric properties and reliability of HfxZr1-xO2 films on Ir substrates", The 20th Korean Conference on Semiconductors, Feb. 4-6th, 2013.
13. Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, Yu Jin Kim, Jeong Hwan Kim, Jong Ho Lee, and Cheol Seong Hwang, "Tri-states memory using ferroelectric-insulator-semiconductor hetero-junctionsfor fifty percent increased data storage", The 19th Korean Conference on Semiconductors, Feb. 15-17th, 2012. (Oral)
12. Un Ki Kim, Yoon Jang Chung, Byoung Keon Park, Eric Eun-Suk Hwang, Min Hyuk Park, Taeyong Eom, and Cheol Seong Hwang, "Property analysis of Zinc Tin Oxide thin film grown by atomic layer deposition process", The 19th Korean Conference on Semiconductors, Feb. 15-17th, 2012. (Oral)
11. Yu Jin Kim, Min Hyuk Park, Hyun Ju Lee, Hyung-Suk Jung, Han Joon Kim and Cheol Seong Hwang, "Polarization switching in ferroelectric thin films with interposed interfacial layer", The 8th joint symposium on ferroelectrics, Feb. 12-14th, 2012.
10. Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, Yu Jin Kim, Jeong Hwan Kim, Jong Ho Lee, Han Joon Kim and Cheol Seong Hwang, "Novel tri-states memory using ferroelectric-insulator-semiconductor hetero-junctions for fifty percent increased data storage", The 8th joined symposium on ferroelectrics, Feb. 12-14th, 2012.
9. Min Hyuk Park, Yu Jin Kim, and Cheol Seong Hwang, "Is there a negative capacitance?" The 8th joined symposium on ferroelectrics, Feb. 12-14th, 2012.
8. Hyun Ju Lee, Min Hyuk Park, Yu Jin Kim, Gun Hwan Kim, Jun Yeong Seok, Anquan Jiang, and Cheol Seong Hwang, "Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr, Ti)O3/Pt and paraelectric capacitors", The 17th Korean Conference on Semiconductors, Feb. 16-18th, 2011.
7. Min Hyuk Park, Hyun Ju Lee, Yu Jin Kim, and Cheol Seong Hwang, "Novel Diode-Embedded Ferroelectric Resistive Memory Using Pt/Pb(Zr,Ti)O3/Al2O3/TiOx/Pt stack capacitor", The 7th joined symposium on ferroelectrics, Feb. 13-15th, 2011. (Awarded)
6. Min Hyuk Park, Hyun Ju Lee, and Cheol Seong Hwang, "Ferroelectric properties of Pt/Pb(Zr,Ti)O3/Al2O3/ZnO/Pt stack capacitors for nonvolatile memory application", The 16th Korean Conference on Semiconductors, Feb. 24-26th, 2010.
5. Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park, and Cheol Seong Hwang, "Polarization reversal in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt ferroelectric capacitors", The 16th Korean Conference on Semiconductors, Feb. 24-26th, 2010.
4. Hyun Ju Lee, An Quan Jiang, Gun Hwan Kim, Min Hyuk Park, and Cheol Seong Hwang, "Unusual improvement in the functionality of ferroelectric films by using the inlaid Al2O3 tunnel switch layer", The 16th Korean Conference on Semiconductors, Feb. 18-20th, 2009. (Oral)
3. Hyun Ju Lee, Min Hyuk Park, Cheol Seong Hwang, "The effects of oxidants on the growth behavior of PbTiO3 thin film by atomic layer deposition", The 5th joined symposium on ferroelectrics, Feb. 8-10th, 2009.
2. Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, and Cheol Seong Hwang, "The effect of periodic relaxation on the growth behavior and electrical properties of atomic layer deposited PbTiO3 thin film", The 5th joined symposium on ferroelectrics, Feb. 8-10th, 2009.
1. Gun Hwan Kim, Hyun Ju Lee, Min Hyuk Park, Cheol Seong Hwang, and An Quan Jiang, "A new analysis of imprinted hysteresis loops for ferroelectric Pb(Zr, Ti)O3 thin film capacitor using the switching transient current measurements", The 5th joined symposium on ferroelectrics, Feb. 8-10th, 2009.