International
2022
109. M. H. Park, K. Yang, J. Y. Park, S. H. Kim, "Physical Scaling-Down of Hafnia-based Ferroelectric thin films", Korean International semiconductor conference on manufacturing technology 2022, Korea, Nov. 2022. (Oral)
108. K. Yang, J. Y. Park, D. H. Lee, S. H. Kim, G. H. Park, G. Y. Kim, J. J. Ryu, G. H. Kim, S. Y. Choi, and M. H. Park, "The Wake-up Mitigation of the Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films by Surface Oxidized W(tungsten) Electrode", International Conference on Electric Materials and Nanotechnology for Green Environment 2022, Korea, Nov. 2022. (Poster)
107. J. Y. Park, K. Yang, D. H. Lee, S. H. Kim, G. H. Park, and M. H. Park, "A study on the effect of the thickness and composition of ferroelectric Hf1-xZrxO2 thin film using Mo electrodes", International Conference on Electric Materials and Nanotechnology for Green Environment 2022, Korea, Nov. 2022. (Oral)
106. Y. Lee and M. H. Park, "Optimization of Metal/Ferroelectric/Insulator/Semiconductor Capacitor Toward Reliable Gate Stacks of Field-effect-transistors", Materials Science & Technology, USA, Oct. 2022. (Oral)
105. K. Yang, J. Y. Park, D. H. Lee, S. H. Kim, G. H. Park, G. Y. Kim, J. J. Ryu, G. H. Kim, S. Y. Choi, and M. H. Park, "Mitigation of the wake-up effect on ferroelectric (Hf,Zr)O2 thin film by a tungsten electrode", 13th Korea-Japan Conference on Ferroelectrics, Korea, Sep. 2022. (Poster)
104. S. H. Kim, K. Yang, J. Y. Park, D. H. Lee, G. H. Park, and M. H. Park, "Strategy to improve interfacial properties by utilizing thin Ti sacrificial layer in Si/Hf0.3Zr0.7O2/Mo capacitor", 13th Korea-Japan Conference on Ferroelectrics, Korea, Sep. 2022. (Poster)
103. J. Y. Park, K. Yang, D. H. Lee, S. H. Kim, G. H. Park, G. Y. Kim, Y. Lee, and M. H. Park, "A study on the ferroelectric properties of Hf1-xZrxO2 films with various thicknesses and compositions on Mo electrode", 13th Korea-Japan Conference on Ferroelectrics, Korea, Sep. 2022. (Poster)
102. D. H. Lee, K. Yang, J. Y. Park, S. H. Kim, G. H. Park, and M. H. Park, "Effects of Electrode Materials on Polarization Switching Kinetics of Ferroelectric Hf0.5Zr0.5O2 Thin Films", ISAF-PFM-ECAPD 2022, France, Jun. 2022. (Poster)
101. S. H. Kim, G. T. Yu, D. H. Lee, K. Yang, J. Y. Park, G. H. Park, and M. H. Park, "Utilizing Ti thin interfacial layer to improve the endurance of antiferroelectric Mo/Hf0.3Zr0.7O2/Si capacitor", ISAF-PFM-ECAPD 2022, France, Jun. 2022. (Poster)
100. Y. Lee, Rachel A. Broughton, H. Alex Hsain, D. H. Lee, S. K. Song, Gregory N. Parsons, M. H. Park, and Jacob L. Jones, "A study of the influence of crystallographic texture on properties of ferroelectric Hf 0.5 Zr 0.5 O 2", ISAF-PFM-ECAPD 2022, France, Jun. 2022. (Oral)
99. K. Yang, S. H. Kim, and M. H. Park, "Enhanced Ferroelectricity And Improved Wake-Up Effect Of Ferroelectric (Hf,Zr)O2 Thin Films By Interfacial Engineering", ISAF-PFM-ECAPD 2022, France, Jun. 2022. (Oral)
2021
98. M. H. Park, "A study on the effect of electrode materials on the ferroelectric properties of Hf0.5Zr0.5O2 thin films", Materials Research Meeting 2021, Japan, Dec. 2021. (Oral)
97. K. Yang, D. H. Lee, J. Y. Park, J. J. Ryu, G. H. Kim, and M. H. Park, "Unprecedented large polarization in polycrystalline fluorite structured ferroelectric Hf0.5Zr0.5O2 thin film deposited on W electrode", International Union of Materials Research Societies - International Conference in Asia 2021, Korea, Oct. 2021. (Poster)
96. D. H. Lee, G. T. Yu, S. H. Kim, J. Y. Park, and M. H. Park, "Effect of Deposition Temperature on the Polarization Switching Kinetics of Ferroelectric Hafnium Zirconate Thin Films", The International Symposium on Hybrid Materials and Processing 2021, Aug. Japan. (poster)
95. G. H. Park, J. Y. Park, and M. H. Park, "A study on fluorite-structured nanolaminates for cell capacitors of dynamic random access memory", 2021 I-YES symposium, Japan/Korea, Aug. 2021. (Oral)
94. J. Y. Park, D. H. Lee, and M. H. Park, "Mitigating wake-up effect and improving the endurance of Ferroelectric Hf0.5Zr0.5O2 by optimizing electric pulse width", IEEE ISAF-ISIF-PFM Virtual Conference, Australia, May. 2021. (Poster)
93. K. Yang, D. H. Lee, J. Y. Park, and M. H. Park, "The electrocaloric effect of HfO2/ZrO2 nanolaminate thin film with field induced ferroelectricity", IEEE ISAF-ISIF-PFM Virtual Conference, Australia, May. 2021. (Poster)
92. D. H. Lee, G. T. Yu, S. H. Kim, J. Y. Park, K. Yang, and M. H. Park, "Deposition temperature dependent polarization switching properties of atomic layer deposited Hf0.5Zr0.5O2 Thin Films", IEEE ISAF-ISIF-PFM Virtual Conference, Australia, May. 2021. (Poster)
91. M. H. Park, and C. S. Hwang, "Understanding Ferroelectric Orthorhombic phase Formation in Hafnia Based Thin Films Based on Classical Nucleation Theory", 8th International Congress on Ceramics, Korea, Apr. 2021. (Oral)
2020
90. M. H. Park, Energy-related applications of ferroelectricity and field-induced ferroelectricity in fluorite-structure oxides, The 20th International Symposium on the Physics of Semiconductors and Applications, Korea, Jul. 2020. (Oral)
89. J. Y. Park, D.H. Lee, K. Yang, J. Y. Park, E. B. Lee, S. H. Kim, and M. H. Park, Mitigating wake-up effect in 9.2 nm-thick Hf0.5Zr0.5O2 film by optimizing fatigue pulses, International Symposium on Hybrid Materials and Processing, Korea, Nov. 2020. (Poster)
88. D. H. Lee, K. Yang, J. Y. Park, G. T. Yu, S. H. Kim, and M. H. Park, Effects of Deposition Temperature on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 thin film, International Symposium on Hybrid Materials and Processing, Korea, Nov. 2020. (Poster)
87. K. Yang, D. H. Lee, J. Y. Park, and M. H. Park, "A study on electrocaloric effect of Hf0.3Zr0.7O2 film with field induced ferroelectricity", International Symposium on Hybrid Materials and Processing, Korea, Nov. 2020. (Poster)
2019
86. T. Mikolajick, T. Mittmann, M. Hoffmann, B.Max, H. Mulaosmanovic, M. H. Park, S. Slesazeck, and U. Schroeder, "Basics and Device Applications of Ferroelectricity in Hafnium Oxide, 7th International Symposium on Integrated Functionalities (ISIF)", O'Brien Centre For Science, UCD, Dublin.
85. M. H. Park, Y. H. Lee, and C. S. Hwang, "Revisiting classical nucleation theory to understand the unexpected ferroelectric phase formation in doped HfO2 thin films", The 11th International Conference on Advanced Materials and Devices, Dec. 2019. (Invited)
84. M. H. Park, Y. H. Lee, T. Mikolajick, U. Schroeder, and C. S. Hwang, "Ferroelectric phase formation in hafnia based thin films", The 13th Pacific Rim Conference of Ceramic Societies (PACRIM13), Oct. 2019. (Invited)
83. M. H. Park, "Ferroelectricity in hafnia based thin films for memory applications", Asia-Pacific PFM 2019, Aug. 2019. (Oral)
82. J. M. Choi, J. H. Nam, B. J. Cho, J. D. Kwon, M. H. Park, and Y. H. Kim, "Two-Dimensional TMDs/Si Heterojunction Photodetector Fabricated by Atomic-Pressure PECVD under extremely Low Temperature (< 200 °C)", Nano Korea 2019, Jul. 2019.
81. M. G. Kozodaev, A. G. Chernikova, R. R. Khakimov, M. H. Park, A. Markeev, and C. S. Hwang, "La-doped Hf0.5Zr0.5O2: a multifaceted material", ISAF-ICE-EMF-IWPM-PFM Meeting 2019, Jul. 2019.
80. Seung Dam Hyun, Beak Su Kim, Min Hyuk Park, Keum Do Kim, Young Hwan Lee, Taehwan Moon, Hyeon Woo Park, Yong Bin Lee, Jang Ho Lho, and Cheol Seong Hwang, "Study on the improvement of interfacial properties of ferroelectric Hf0.5Zr0.5O2 thin film deposited by atomic layer deposition with Tetrakis(dimethylamido)hafnium(TDMAH) precursor", F2CP2 2019 Joint Conference, EPFL, Lausanne, Switzerland, July 14 - 19th, 2019. (Poster)
79. Y. H. Lee*, S. D. Hyun, T. Moon, K. D. Kim, H. W. Park, Y. B. Lee, B. S. Kim, J. Roh, M. H. Park, and C. S. Hwang, "Nucleation-Limited Phase Transformation in Ferroelectric Hf0.5Zr0.5O2 ThinFilms", F2CP2 2019 Joint Conference, EPFL, Lausanne, Switzerland, Jul. 14 - 19th, 2019. (Poster)
78. H. W. Park*, J. Roh, Y. B. Lee, K. D. Kim, S. D. Hyun, Y. H. Lee, B. S. Kim, B. Y. Kim, H.H. Kim, M. H. Park, and C. S. Hwang, "Quasi-static Negative Capacitance in Ferroelectric Thin Film by Phase Field Simulation Approach", F2CP2 2019 Joint Conference, EPFL, Lausanne, Switzerland, Jul. 14 - 19th, 2019. (Poster)
2018
77. T. Mikolajick, T. Schenk, T. Mittmann, M. Hoffmann, B.Max, C. Richter, M. Pesic, F. Fengler, H. Mulaosmanovic, M.H. Park, S. Slesazeck, U. Schroeder, J. Müller, P. Polakowski, S. Müller, R. Materlik, A. Kersch, "NVM Technologies Based on Ferroelectric Hafnium Oxide", CIMTEC2018, Perugia, Italy, Jun. 4-14th, 2018. (Invited)
76. T. Mittmann, M.H. Park, C. Richter, T. Mikolajick and U. Schroeder, "Comparison of Ferroelectric Properties in ALD vs. PVD Deposited Hf1-xZrxO2 Films", 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018), Hiroshima, Japan, May. 28-31st, 2018 (Poster)
75. S. Jachalke, T. Schenk, M. H. Park, U. Schroeder, T. Mikolajick, H. Stöcker, E. Mehner, and D. C. Meyer, "Pyroelectricity of Silicon-Doped Hafnium Oxide Thin Films", 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018), Hiroshima, Japan, May. 28-31st, 2018 (Oral)
74. C. Richter, M.H. Park, T. Schenk, M. Pešić, M. Hoffmann, F. Fengler, D. Pohl, B. Rellinghaus, C. Zhou, C.-C. Chung, J. L. Jones, T. Mikolajick and U. Schroeder, "Robust Ferroelectric Performance by Lanthanum Doping in Hafnium Oxide", 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018), Hiroshima, Japan, May. 28-31st, 2018. (Invited)
73. Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Beak Su Kim, and Cheol Seong Hwang, "Dispersion in ferroelectric switching performance of polycrystalline Hf0.5 Zr0.5O2 thin films", 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference, Hiroshima, Japan, May. 27th-Jun. 1st, 2018. (Poster)
72. Keum Do Kim, Yu Jin Kim, Hyeon Woo Park, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Yong Bin Lee, Min Hyuk Park, and Cheol Seong Hwang, "Negative capacitance effect in the atomic-layer-deposited Al2O3/Hf0.3Zr0.7O2 bilayer thin film", 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference, Hiroshima, Japan, May. 27th-Jun. 1st, 2018. (Poster)
71. Young Hwan Lee, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Soo Kim, and Cheol Seong Hwang, "Effective phase transformation kinetics of ferroelectric Hf0.5Zr0.5O2 films by the presence of the top electrode", High-k oxides by ALD, Poland, Mar. 7-10th, 2018. (Poster)
70. Hyeon Woo Park, Yujin Kim, Seung Dam Hyun, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Taehwan Moon, Yong Bin Lee, Min Hyuk Park, Jang Ho Noh, and Cheol Seong Hwang, "Comparative study on models of the voltage drop phenomena in ferroelectric thin films", High-k oxides by ALD, Poland, Mar. 7-10th, 2018. (Poster)
2017
69. M. H. Park and C. S. Hwang, “Ferroelectric fluorite structured oxides: Materials fundamentals, switching, wake- up, and applications in electronics and energy”, IEEE SISC 2017, San Diego, USA, Dec. 6-9th, 2017. (Invited)
68. Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, and Cheol Seong Hwang, “Diode performance of the Pt/Al2O3/SrTiO3 hetero-structure with two-dimensional electron gas and its time-dependent resistance evolution”, IEEE SISC 2017, San Diego, USA, Dec. 6-9th, 2017. (Poster)
67. Min Hyuk Park, Tony Schenk, Michael Hoffmann, Steve Knebel, Jan Gaertner, Thomas Mikolajick, and Uwe Schroeder, “Phase Transitions in Doped Hafnia Thin Films for Pyroelectric Applications” IMF-2017, San Antonio, USA, Sep. 4-9th, 2017.
66. Terence Mittmann, Franz P. G. Fengler, Claudia Richter, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder, “Optimizing process condition for improved Hf1-xZrxO2 FRAM performance” INFOS 2017, Postdam, Germany, Jun. 27-30th, 2017.
65. M. H. Park, T. Schenk, C. Richter, E. D. Grimley, J. M. LeBeau, C. Zhou, J. L. Jones, T. Mikolajick, U. Schroeder, “Structural differences in ALD doped HfO2 or ZrO2 films impacting ferroelectric properties”, Euro CVD-Baltic ALD 2017, Linkoeping, Sweden, Jun. 11-14th, 2017.
64. T. Schenk, M. H. Park, M. Pešić, M. Hoffmann, C. Richter, S. Mueller, H. Mulaosmanovic, F. P. G. Fengler, S. Slesazeck, T. Mikolajick, U. Schroeder, “10 Years Fluorite-type Ferroelectrics – A Survey”, TO-BE 2017.
63. M. H. Park and C. S. Hwang, “Phase Transition and Related Energy Applications of (Hf, Zr)O2 Films”, ECS spring meeting, New Orleans, LA, USA, May. 28th – Jun. 1st, 2017. (Invited)
62. T. Schenk, M. H. Park, C. Richter, E.D. Grimley, J.M. LeBeau, C. Zhou, J.L. Jones, T. Mikolajick, and Uwe Schroeder, “Structural Differences in Doped HfO2: Root Causes for Varying Ferroelectric Properties Across Different Dopants”, 2017 Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices, and the Piezoresponse Force Microscopy and Polar Materials at the Nanoscale, Atlanta, GA, USA, May. 7-11th, 2017.
61. Franz G. P. Fengler T. Mittmann, M. H. Park, C. Richter, T. Mikolajick, and U. Schroeder, “Influence of Process Conditions on Structural and Electrical Properties of Hf1-xZrxO2: Dead Layer Effect and Defect Trapping”, 2017 Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices, and the Piezoresponse Force Microscopy and Polar Materials at the Nanoscale, Atlanta, GA, USA, May. 7-11th, 2017.
60. Hyeon Woo Park, Yu Jin Kim, Hiroyuki Itoi, Taehwan Moon, Young Jae Kwon, Cheol Hyun Ahn, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Min Hyuk Park, Young Bin Lee, and Cheol Seong Hwang, “Study on Hysteresis of Negative Capacitance in Al2O3/BaTiO3 Bilayers”, Novel high-k Application Workshop 2017, Dresden, Germany, Mar. 9th, 2017. (Poster)
59. Seung Dam Hyun, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeon Woo Park, Yong Bin Lee, and Cheol Seong Hwang, “Study on Ferroelectric Switching Kinetics in Polycrystalline Hf0.5Zr0.5O2 Films” Novel high-k Application Workshop 2017, Dresden, Germany, Mar. 9th, 2017. (Poster)
58. Keum Do Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Seung Dam Hyun, Hyeon Woo Park, and Cheol Seong Hwang, “Suppression of crystallization in the as-deposited Hf0.5Zr0.5O2 thin films by controlling deposition temperature during atomic layer deposition”, Novel high-k Application Workshop 2017, Dresden, Germany, Mar. 9th, 2017. (Poster)
2016
57. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, and Cheol Seong Hwang, “Ferroelectric (Hf,Zr)O2 films”, ECS fall meeting, 2016. (Invited)
56. F. Fengler, M. Pesic, S. Starschich, T. Schneller, U. Boettger, L. Larcher, A. Padovani, T. Schenk, M. H. Park, T. Mikolajick, and U. Schroeder, “Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications”, ESSCIRC-ESSDERC 2016, Lausanne, Sep. 12-15th, 2016.
55. F. Fengler, M. Pesic, S. Starschich, T. Schneller, U. Boettger, L. Larcher, A. Padovani, T. Schenk, M. H. Park, T. Mikolajick, and U. Schroeder, “Wake-up behavior comparison between PZT and HfO2 based ferroelectrics”, ISAF/ECAPD/PFM Conference 2016, Darmstadt, Aug. 21-25th, 2016. (Oral)
54. M. H. Park, T. Schenk, C. Richter, E.D. Grimley, J.M. LeBeau, M. Tallarida, C. Mariani, L. Simonelli, C.M. Fancher, J.L. Jones, R. Materlik, C. Künneth, A. Kersch, T. Mikolajick, and U. Schroeder, “Structural Root Causes of Ferroelectricity in Doped Hafnium Oxide”, ISAF/ECAPD/PFM Conference 2016, Darmstadt, Aug. 21-25th, 2016. (Oral)
53. Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang, “Examination on the effects of various sputter deposition conditions on ferroelectric Hf0.5Zr0.5O2 films”, ISAF/ECAPD/PFM Conference 2016, Darmstadt, Aug. 21-25th, 2016. (Poster)
52. Seung Dam Hyun, Yu Jin Kim, Young Hwan Lee, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Keum Do Kim, Hyun Woo Park, and Cheol Seong Hwang, “Study on the Ferroelectric Switching Kinetics of Hf0.5Zr0.5O2 films after wake-up effect”, ISAF/ECAPD/PFM Conference 2016, Darmstadt, Aug. 21-25th, 2016. (Poster)
51. Keum Do Kim, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Taehong Gwon, Cheol Seong Hwang, “Ferroelectric Engineered HfO2 thin film prepared by low temperature atomic layer deposition”, ISAF/ECAPD/PFM Conference 2016, Darmstadt, Aug. 21-25th, 2016. (Poster)
50. Han Joon Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang, “Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films”, ISAF/ECAPD/PFM Conference 2016, Darmstadt, Aug. 21-25th, 2016. (Oral)
49. Yu Jin Kim, Min Hyuk Park, and Cheol Seong Hwang, “Negative capacitance: theory, practice and limitations”, ISAF/ECAPD/PFM Conference 2016, Darmstadt, Aug. 21-25th, 2016. (Invited)
48. Claudia Richter, Min Hyuk Park, Tony Schenk, Robin Materlik, Christopher Kuenneth, Alfred Kersch, Cheol Seong Hwang, Thomas Mikolajick, Uwe Schroeder, “Impact of ALD processing on non-volatile memory performance of ferroelectric HfO2 based capacitors”, ALD2016, Doublin, 2016. (Oral)
47. Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim. Taehwan Moon, Keum Do Kim, Seong Dam Hyun, and Cheol Seong Hwang, “Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 films by RF-sputtering method”, KJC-FE11, Sungkyunkwan University, Seoul, Korea, Aug. 9th, 2016. (Poster)
46. Seung Dam Hyun, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Taehwan Moon, Keum Do Kim, Hyeonwoo Park, and Cheol Seong Hwang, “Study on ferroelectric switching kinetics affected by wake up effect in Hf0.5Zr0.5O2 films”, KJC-FE11, Sungkyunkwan University, Seoul, Korea, Aug. 9th, 2016. (Poster)
45. Keum Do Kim. Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Seung Dam Hyun, Hyeonwoo Park, and Cheol Seong Hwang, “Ferroelectric to antiferroelectric transition in Hf0.5Zr0.5O2 thin films induced by deposition temperature control during atomic layer deposition” KJC-FE11, Sungkyunkwan University, Seoul, Korea, Aug. 9th, 2016. (Poster)
44. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Franz Fengler, Thomas Mikolajick, Uwe Schroeder, and Cheol Seong Hwang, “Optimization of dielectric and ferroelectric properties in Hf1-xZrxO2 films for non-volatile ferroelectric memory applications", 19th Workshop on Dielectrics in Microelectronics, Catania, Italy, Jun. 27-30th, 2016. (Oral)
43. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim,Young Hwan Lee, Seung Dam Hyun, Uwe Schroeder, and Cheol Seong Hwang, “Current understanding of ferroelectricity and field‐induced ferroelectricity in (Hf,Zr)O2 films based on first order phase transition theory”, Novel High-k workshop, Technical University Dresden, Mar. 14-15th, 2016. (Oral)
42. Min Hyuk Park and Cheol Seong Hwang, “Phase Transition and Related Energy Applications of (Hf,Zr)O2 Films”, ECS spring meeting, 2016. (invited)
2015
41. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun and Cheol Seong Hwang, "Analysis on the wake-up behavior of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement", IEFM 2015 1st International Symposium on Emerging Functional Materials, Songdo, Incheon, Korea, Nov. 4-6th, 2015. (Poster)
40. Keum Do Kim, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun and Cheol Seong Hwang, "Evolution of the Ferroelectricity in undoped HfO2 films through Deposition Temperature Control during Atomic Layer Deposition", IEFM 2015 1st International Symposium on Emerging Functional Materials, Songdo, Incheon, Korea, Nov. 4-6th, 2015. (Poster)
39. U. Schroeder, T. Schenk, C. Richter, M. Hoffmann, R. Materlik, A. Kersch, Min Hyuk Park, Cheol Seong Hwang and T. Mikolajick "Ferroelectric HfO2 for Novel Semiconductor Devices", ALD 2015, Hilton Hotel, Portland, USA, Jun. 28th - Jul. 1st, 2015. (Oral)
38. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, and Cheol Seong Hwang, "Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1-xO2 films", ISAF-ISIF-PFM-2015, Singapore, May. 24-27th 2015.
37. Taehwan Moon, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Sang Woon Lee and Cheol Seong Hwang, "Carrier density control of 2-dimensional electron gas at a-Al2O3/SrTiO3 interface by ALD using O3 treatment", ISAF-ISIF-PFM-2015, Singapore, May. 24-27th 2015.
36. Young Hwan Lee, Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, and Cheol Seong Hwang, "The Ferroelectric and Antiferroelectric Properties of HfO2/ZrO2 Nanolaminate Systems", ISAF-ISIF-PFM-2015, Singapore, May. 24-27th 2015.
35. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, and Cheol Seong Hwang, "An analysis for the wake-up phenomenon of ferroelectric Hf0.5Zr0.5O2 thin films by transient switching current", ISAF-ISIF-PFM-2015, Singapore, May. 24-27th 2015.
2014
34. Invited, Cheol Seong Hwang, Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, “Ferroelectricity in HfO2-Based Films”, MRS FALL MEETING & EXHIBIT, Boston, USA, Nov. 30th-Dec. 5th, 2014.
33. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, and Cheol Seong Hwang, "Thin HfxZr1-xO2 Films: A New Lead-free Material for Electrostatic Supercapacitors", HyMAP2014, Busan, Korea, Nov. 10-14th, 2014. (Oral)
32. M. H. Park, H. J. Kim, Y. J. Kim, W. Lee, T. Moon, K. D. Kim, and C. S. Hwang, “Comparative study on the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes”, 14th Annual Non-Volatile Memory Technology Symposium (NVMTS 2014), Jeju, Korea, Oct. 27-29th, 2014. (Poster)
31. H. J. Kim, M. H. Park, Y. J. Kim, T. Moon, K. D. Kim, W. Jeon, T. Gwon and C. S. Hwang, “Incorporation of Al2O3 inter-layer to ferroelectric Hf0.5Zr0.5O2 films for controlling grain size and leakage current”, 14th Annual Non-Volatile Memory Technology Symposium (NVMTS 2014), Jeju, Korea, Oct. 27-29th, 2014. (Poster)
30. Invited, Cheol Seong Hwang and Min Hyuk Park, "HfO2-based Ferroelectric Thin Films", JKCFE 10, Hiroshima, Japan, Aug. 17-20th, 2014.
29. Invited, Cheol Seong Hwang, Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, "Ferroelectricity in HfO2-based films", Electroceramics XIV, Bucharest, Romania, Jun. 16-20th, 2014.
28. Min Hyuk Park, Ju-Young Cho, Han Joon Kim, Yu Jin Kim, Deok Yong Cho, Hyo Kyeom Kim, Woongkyu Lee, Il-Hyuk Yu, Taehwan Moon, Tae Yeong Koo, Young-Chang Joo, and Cheol Seong Hwang, "The origin of the ferroelectricity in thin Hf1-xZrxO2 films: microstructure and in-plane tensile stress formed during island coalescence", MRS SPRING MEETING & EXHIBIT, San Francisco, California, USA. Apr. 21-25th, 2014. (Oral)
27. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Taehwan Moon and Cheol Seong Hwang, "Grain size engineering for ferroelectric (Hf,Zr)O2 films by insertion of thin Al2O3 layer", MRS SPRING MEETING & EXHIBIT, San Francisco, California, USA, Apr. 21-25th, 2014. (Poster)
26. Taehwan Moon. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Hyo Kyeom Kim and Cheol Seong Hwang, "The Effects of Evolution of Phases and Forming Gas Annealing on Ferroeletric Properties of Thin Hf0.5Zr0.5O2 Films", MRS SPRING MEETING & EXHIBIT, San Francisco, California, USA, Apr. 21-25th, 2014. (Poster)
2009-2013
25. Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Doo Seok Jeong, Cheol Seong Hwang, "Nagative capacitance in ferroelectric oxides", CECAM-Workshop Functional oxides for emerging technologies, Bremen University, Bremen, Germany, Oct. 14-18th, 2013. (Invited)
24. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Hyo Kyeom Kim, Il-Hyuk Yu, and Cheol Seong Hwang, "Investigation on ferroelectric properties of HfxZr1-xO2 thin film with various compositions", The 8th Asian Meeting on Ferroelectrics(AMF-8), Pattaya, Thailand, Dec 9-14th, 2012. (Poster)
23. Yu Jin Kim, Min Hyuk Park, Hyung-Suk Jung, Han Joon Kim, and Cheol Seong Hwang, "Direct Observation of Transient Negative Capacitance in Switching Domains of Ferroelectric/Dielectric Bi-layer Structure", The 8th Asian Meeting on Ferroelectrics(AMF-8), Pattaya, Thailand, Dec 9-14th, 2012. (Oral)
22. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woonkyu Lee, Hyo Kyeom Kim, Il-Hyuk Yoo and Cheol Seong Hwang, "Examination on the ferroelectricity of HfxZr1-xO2 thin film on various substrates", The 8th Asian Meeting on Ferroelectrics (AMF-8), Pattaya, Thailand, Dec 9-14th, 2012. (Oral)
21. Yu Jin Kim, Min Hyuk Park, Han Joon Kim, and Cheol Seong Hwang*, "Transient Negative Capacitance in switching domain of ferroelectric thin films", The 8th Asian Meeting on Ferroelectrics(AMF-8), Pattaya, Thailand, Dec 9-14th, 2012. (Plenary talk)
20. Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Hyo Kyeom Kim, Il-Hyuk Yu, and Cheol Seong Hwang, "Effect of Composition on the ferroelectric properties of HfxZr1-xO2 thin film", KJC-FE09, Ulsan, Korea, Aug. 7-10th, 2012. (Poster)
19. Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Doo Seok Jeong, Anquan Jiang, and Cheol Seong Hwang, "Transient Negative Capacitance in Domain Wall of Ferroelectric Thin Films", KJC-FE09, Ulsan, Korea, Aug. 7-10th, 2012. (Poster)
18. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Hyo Kyeom Kim, Il-Hyuk Yu, and Cheol Seong Hwang, "Examination on the ferroelectricity in HfxZr1-xO2 thin film", KJC-FE09, Ulsan, Korea, Aug. 7-10th, 2012. (Contributed Talk)
17. Min Hyuk Park, Hyun Ju Lee, Yu Jin Kim, Jong Ho Lee, Woongkyu Lee, Han Joon Kim, and Cheol Seong Hwang, "Diode-Embedded Resistive Memory Using Stacked Ferroelectric/Dielectric Layer", WoDiM 2012, Dresden, Germany, Jun. 25-27th, 2012. (Poster)
16. Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, Yu Jin Kim, Jeong Hwan Kim, Jong Ho Lee, and Cheol Seong Hwang, "Novel tri-states memory using ferroelectric-insulator-semiconductor hetero-junctions for fifty percent increased data storage", WoDiM 2012, Dresden, Germany, Jun. 25-27th, 2012. (Oral)
15. Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Doo Seok Jeong, Anquan Jiang and Cheol Seong Hwang, "Direct observation of transient negative capacitance in domain wall of ferroelectric thin films", Nature Conference 2012, Aachen, Germany, Jun. 17-20th, 2012. (Poster)
14. Un Ki Kim, Yoon Jang Chung, Byoung Keon Park, Eric Eun-Suk Hwang, Min Hyuk Park, Taeyong Eom, and Cheol Seong Hwang, "Investigation of zinc tin oxide thin film grown by atomic layer deposition", ITC 2012, Lisbon, Portugal, Jan. 30-31st, 2012.
13. Min Hyuk Park, Hyun Ju Lee, Yu Jin Kim, and Cheol Seong Hwang, "Novel Diode-Embedded Ferroelectric Resistive Memory for Crossbar Array Application", ISAF-PFM-2011, Vancouver, Canada, July 24-27th, 2011. (Poster)
12. Yu Jin Kim, Hyun Ju Lee, Min Hyuk Park, An Quan Jiang, and Cheol Seong Hwang, "The tunnel switching behavior in SiO2/Pb(Zr,Ti)O3 Bi-layer Capacitors" ISAF-PFM-2011, Vancouver, Canada, July 24-27th, 2011. (Poster)
11. Invited, Cheol Seong Hwang, Hyun Ju Lee, An Quan Jiang, Gun Hwan Kim, and Min Hyuk Park, "Understanding of ferroelectric switching of the ultra-thin Pb(Zr,Ti)O3 thin films using the inlaid Al2O3 tunnel switch layer", JKC-FE08, Himeji, Japan, Aug. 4th, 2010.
10. Min Hyuk Park, Hyun Ju Lee, Yu Jin Kim, and Cheol Seong Hwang, "Ferroelectric Properties of Pt/Pb(Zr,Ti)O3/Al2O3/ZnO/Pt Stack Capacitors for Nonvolatile Memory Applications", The 7th AMF-AMEC 2010, Jeju, Korea, Jun. 28th-Jul. 1st, 2010. (Poster, Awarded)
9. Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park, Yu Jin Kim, and Cheol Seong Hwang, "Study on the charge injection for the polarization reversal in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt ferroelectric capacitors", The 7th AMF-AMEC 2010, Jeju, Korea, Jun. 28th-Jul. 1st, 2010. (Poster)
8. Min Hyuk Park, Hyun Ju Lee and Cheol Seong Hwang, "Ferroelectric Properties of Pt/Pb(Zr,Ti)O3/Al2O3/ZnO/Pt Stack Capacitors for Nonvolatile Memory Applications.", MRS spring meeting 2010, San Francisco Marriott, Apr. 8th, 2010. (Oral)
7. Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park and Cheol Seong Hwang, "Polarization Reversal in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt Ferroelectric Capacitors.", MRS spring meeting 2010, San Francisco Marriott, Apr. 7, 2010. (Oral)
6. An Quan Jiang, Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park and Cheol Seong Hwang, "Inlaid Al2O3 Tunnel Switch Layer for Improving the Ferroelectric Performance of the Ultra-thin Pb(Zr,Ti)O3 Thin Films.", MRS spring meeting 2010, San Francisco Marriott, Apr. 7th, 2010. (Oral)
5. An Quan Jiang, Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park and Cheol Seong Hwang, "Unusual improvement in the functionality of ferroelectric films by using the inlaid Al2O3 tunnel switch layer", IMF-ISAF 2009, Xi'an, China, Aug. 23-26th, 2009. (Invited)
4. Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, and Cheol Seong Hwang, "The effect of periodic relaxation on the growth behavior and electrical properties of atomic layer deposited PbTiO3 thin film", IMF-ISAF 2009, Xi'an, China, Aug. 23-26th, 2009. (Oral)
3. Hyun Ju Lee, Min Hyuk Park, and Cheol Seong Hwang, "The effect of oxidants on the growth behavior of PbTiO3 thin film by atomic layer deposition", IMF-ISAF 2009, Xi'an, China, Aug. 23-26th, 2009. (Oral)
2. Hyun Ju Lee, Min Hyuk Park and Cheol Seong Hwang, "The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition", 215th ECS meeting, San Francisco, CA, May. 24-29th, 2009. (Poster)
1. Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim and Cheol Seong Hwang, "The Effect of Periodic Relaxation on the Growth Behavior and Electrical Properties of Atomic Layer Deposited PbTiO3 Thin film", 215th ECS meeting, San Francisco, CA, May. 24-29th, 2009. (Poster)